High Breakdown Voltage (>3 kV) in β-Ga2O3 Lateral MOSFETs Enabled by a Si3N4 Terminal Structure

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Abstract
We report a lateral β-Ga2O3 MOSFET incorporating a simple Si3N4 terminal structure for electric-field management. The main contribution of this work is the demonstration that this process-compatible terminal design can enhance the breakdown performance while preserving the forward conduction characteristics of the device. The epitaxial layer exhibits high crystalline quality, a smooth surface morphology, and favorable carrier transport properties. With the Si3N4 terminal structure, the device achieves a breakdown voltage exceeding 3 kV, and the average breakdown field is increased from 0.85 MV/cm to 1.63 MV/cm. Meanwhile, the forward conduction characteristics are well maintained. Electric-field simulations further reveal that the Si3N4 terminal structure effectively mitigates electric-field crowding at the gate edge, accounting for the improved breakdown behavior. These results demonstrate that the Si3N4-based terminal design provides a simple and effective strategy for simultaneously improving breakdown performance and maintaining forward conduction characteristics in lateral β-Ga2O3 MOSFETs.
Funding Information
  • National Natural Science Foundation of China (62204244)
  • Natural Science Foundation of Zhejiang Province (LQ23F040003)
  • Ningbo Yongjiang Talent Introduction Programme (2021A-046-C)

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