Shujun Zhu
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Research Interests
Shujun Zhu has a total of 9 co-authors. Here are the top co-authors by number of shared publications:
- Chang Liu
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
1 shared publication - Hengrui Zhang
School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
1 shared publication - Jichun Ye
Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo China
1 shared publication - Ningtao Liu
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
1 shared publication - Weiguang Yang
Department of Electronic Information Materials, School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
1 shared publication - Wenrui Zhang
Chinese Academy of Sciences
1 shared publication
Latest Publications
- Open Access
- 28 May 2026
- Published by MDPI AG in Electronics
- Vol. 15 (11) , 2337
High Breakdown Voltage (>3 kV) in β-Ga2O3 Lateral MOSFETs Enabled by a Si3N4 Terminal Structure
We report a lateral β-Ga2O3 MOSFET incorporating a simple Si3N4 terminal structure for electric-field management. The main contribution of this work is the demonstration that this process-compatible terminal design can enhance the breakdown performance while preserving the forward conduction characteristics of the device. The epitaxial layer exhibits high crystalline quality, a smooth surface morphology, and favorable carrier transport properties. With the Si3N4 terminal structure, the device achieves a breakdown voltage exceeding 3 kV, and the average breakdown field is increased from 0.85 MV/cm to 1.63 MV/cm. Meanwhile, the forward conduction characteristics are well maintained. Electric-field simulations further reveal that the Si3N4 terminal structure effectively mitigates electric-field crowding at the gate edge, accounting for the improved breakdown behavior. These results demonstrate that the Si3N4-based terminal design provides a simple and effective strategy for simultaneously improving breakdown performance and maintaining forward conduction characteristics in lateral β-Ga2O3 MOSFETs.
- 28 May 2026
- Published by MDPI AG in Electronics
- Vol. 15 (11) , 2337
Open AccessHigh Breakdown Voltage (>3 kV) in β-Ga2O3 Lateral MOSFETs Enabled by a Si3N4 Terminal Structure
We report a lateral β-Ga2O3 MOSFET incorporating a simple Si3N4 terminal structure for electric-field management. The main contribution of this work is the demonstration that this process-compatible terminal design can enhance the breakdown performance while preserving the forward conduction characteristics of the device. The epitaxial layer exhibits high crystalline quality, a smooth surface morphology, and favorable carrier transport properties. With the Si3N4 terminal structure, the device achieves a breakdown voltage exceeding 3 kV, and the average breakdown field is increased from 0.85 MV/cm to 1.63 MV/cm. Meanwhile, the forward conduction characteristics are well maintained. Electric-field simulations further reveal that the Si3N4 terminal structure effectively mitigates electric-field crowding at the gate edge, accounting for the improved breakdown behavior. These results demonstrate that the Si3N4-based terminal design provides a simple and effective strategy for simultaneously improving breakdown performance and maintaining forward conduction characteristics in lateral β-Ga2O3 MOSFETs.