Schottky Barrier Diode Circuits in Silicon for Future Millimeter-Wave and Terahertz Applications
Authors:
- Ullrich R. PfeifferUPUllrich R. Pfeiffer
- Robert M. RasselRRRobert M. Rassel
- Shawn PinkettSPShawn Pinkett
- Scott K. ReynoldsSRScott K. Reynolds
- 1 February 2008
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 56 (2) , 364-371
Abstract
This paper presents Schottky barrier diode circuits fully integrated in a 0.13- mum SiGe BiCMOS process technology. A subharmonically pumped upconverter and a frequency doubler are demonstrated that operate beyond 100 GHz without the need of external components. The upconverter has a size of 430 times 780 mum2 including on-chip matching elements and bond pads. It has a conversion gain of - 6 to - 7 dB from 100 to 120 GHz. The upconverter achieves a high single-sideband saturated output power of - 4 dBm from 100 to 120 GHz and a high linearity with a 1-dB compression point of - 6 dBm. The frequency doubler has a size of 360 times 500 mum2 and can deliver up to 2.5 dBm at 110 GHz.Keywords
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