Green/yellow light emitting diodes from isoelectronically doped ZnSe quantum well structures
Authors:
- 26 April 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (17) , 2108-2110
Abstract
Green/yellow emission has been obtained from ZnSe‐based pn junction heterostructures where Te is introduced as an isoelectronic center by planar doping of (Zn,Cd)Se quantum wells with ZnTe. The spectra show details which are directly related to the strong coupling of excitons to the lattice at the Te‐rich sites.Keywords
This publication has 16 references indexed in Scilit:
- Heavy p-doping of ZnTe by molecular beam epitaxy using a nitrogen plasma sourceApplied Physics Letters, 1993
- Graded band gap ohmic contact to p-ZnSeApplied Physics Letters, 1992
- ZnSe based multilayer pn junctions as efficient light emitting diodes for display applicationsApplied Physics Letters, 1992
- Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wellsApplied Physics Letters, 1991
- The growth and properties of high performance AlGalnP emitters using a lattice mismatched GaP window layerJournal of Electronic Materials, 1991
- Characteristics of p-type ZnSe Layers Grown by Molecular Beam Epitaxy with Radical DopingJapanese Journal of Applied Physics, 1991
- Isoelectronicδdoping in a ZnSe superlattice: Tellurium as an efficient hole trapPhysical Review B, 1989
- Exciton self-trapping in ZnSe-ZnTe alloysPhysical Review Letters, 1987
- Localization of excitons and Anderson transition in ZnSe1-xTex solid solutionsSolid State Communications, 1984
- Isovalent‐impurity clusters in koster‐slater approximationPhysica Status Solidi (b), 1983