Process variability analysis of a Si/SiGe HBT technology with greater than 200 GHz performance
Authors:
- A. StrickerASA. Stricker
- G. FreemanGFG. Freeman
- 25 June 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 10889299,p. 80-83
Abstract
A process tolerance analysis of a SiGe NPN HBT with >200 GHz f/sub T/ and >250 GHz f/sub MAX/ is presented. AC and DC device results on 200 mm wafers demonstrate a wide process window resulting in a highly manufacturable HBT technology.Keywords
This publication has 3 references indexed in Scilit:
- Ultra high speed SiGe NPN for advanced BiCMOS technology2002
- Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technologyIEEE Electron Device Letters, 2002
- A 210-GHz f/sub T/ SiGe HBT with a non-self-aligned structureIEEE Electron Device Letters, 2001