1200-V/10-A Press-Pack Gallium Oxide Schottky Barrier Diode Under a Quasi-Uniaxial Pressure of More Than 20 MPa

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Abstract
β-Ga2O3 is a competitive candidate for high-voltage power electronics because of its high critical field strength and easy access to high-quality native substrates. Rapid progress has been made in the electrical and thermal performances of β-Ga2O3 devices. However, the mechanical challenges presented by β-Ga2O3 to device packaging have hardly been addressed, specifically in the context of a press-pack package used widely in high-voltage high-capacity power devices. For the first time, this paper validates the feasibility of a β-Ga2O3 press-pack power device utilizing a 1200 V β-Ga2O3 SBD die under a quasi-uniaxial pressure of more than 20 MPa applied to a 200-μm-thick substrate. The reverse leakage current of the press-back β-Ga2O3 SBD remained stable under various pressures ranging from 2 MPa to 20 MPa, which indicated that no mechanical damage or defects that could have degraded the electrical performance were generated. Capacitance–voltage results showed that the Schottky barrier height was unaffected by the quasi-uniaxial pressures in the test range. Higher pressure reduced the contact resistance and the junction-to-case thermal resistance, both of which are beneficial for increasing the power capacity of the press-pack β-Ga2O3 SBD. Under the maximum clamping pressure of 20 MPa, the steady-state junction temperature rise did not exceed 150 K at DC 10 A and a corresponding heating power of over 27 W, from which a junction-to-case thermal resistance of below 5 K/W was determined.
Funding Information
  • Research Grants Council of Hong Kong Special Administrative Region, China (STG3/E-602/23N)
  • Research Grants Council of Hong Kong Special Administrative Region, China (16202825)

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