β-Ga₂O₃ is a competitive candidate for high-voltage power electronics because of its high critical field strength and easy access to high-quality native substrates. Rapid progress has been made in the electrical and thermal performances of β-Ga₂O₃ devices. However, the mechanical challenges presented by β-Ga₂O₃ to device packaging have hardly been addressed, specifically in the context of a press-pack package used widely in high-voltage high-capacity power devices. For the first time, this paper validates the feasibility of a β-Ga₂O₃ press-pack power device utilizing a 1200 V β-Ga₂O₃ SBD die under a quasi-uniaxial pressure of more than 20 MPa applied to a 200-μm-thick substrate. The reverse leakage current of the press-back β-Ga₂O₃ SBD remained stable under various pressures ranging from 2 MPa to 20 MPa, which indicated that no mechanical damage or defects that could have degraded the electrical performance were generated. Capacitance–voltage results showed that the Schottky barrier height was unaffected by the quasi-uniaxial pressures in the test range. Higher pressure reduced the contact resistance and the junction-to-case thermal resistance, both of which are beneficial for increasing the power capacity of the press-pack β-Ga₂O₃ SBD. Under the maximum clamping pressure of 20 MPa, the steady-state junction temperature rise did not exceed 150 K at DC 10 A and a corresponding heating power of over 27 W, from which a junction-to-case thermal resistance of below 5 K/W was determined.

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