5-100 GHz InP coplanar waveguide MMIC distributed amplifier
Authors:
- R. Majidi-AhyRMR. Majidi-Ahy
- C.K. NishimotoCNC.K. Nishimoto
- M. RiaziatMRM. Riaziat
- M. GlennMGM. Glenn
- S. SilvermanSSS. Silverman
- S.-L. WengSWS.-L. Weng
- Y.-C. PaoYPY.-C. Pao
- G.A. ZdasiukGZG.A. Zdasiuk
- S.G. BandySBS.G. Bandy
- Z.C.H. TanZTZ.C.H. Tan
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 38 (12) , 1986-1993
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Impact of surface layer on In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP high electron mobility transistorsIEEE Electron Device Letters, 1990
- 94 GHz InP MMIC five-section distributed amplifierElectronics Letters, 1990
- Highest current gain cutoff frequency with 0.08 mu m gate HEMT on InP1990
- 100 GHz active electronic probe for on-wafer S-parameter measurementsElectronics Letters, 1989
- Millimetre-wave active probe frequency-multiplier for on-wafer characterisation of GaAs devices and ICsElectronics Letters, 1989
- 120-GHz Active Wafer Probes for Picosecond Device Measurement1989
- Calculation of the conduction band discontinuity for Ga0.47In0.53As/Al0.48In0.52As heterojunctionJournal of Applied Physics, 1984
- Measurement of the Γ-L separation in Ga0.47In0.53As by ultraviolet photoemissionApplied Physics Letters, 1982