Impact of front-end wearout mechanisms on FinFET SRAM soft error rate

This publication has 12 references indexed in Scilit:

• Characterization of Single Bit and Multiple Cell Soft Error Events in Planar and FinFET SRAMs
  IEEE Transactions on Device and Materials Reliability, 2016
• Hot carrier degradation modeling of short-channel n-FinFETs suitable for circuit simulators
  Microelectronics Reliability, 2016
• An Experimental Approach to Accurate Alpha-SER Modeling and Optimization Through Design Parameters in 6T SRAM Cells for Deep-Nanometer CMOS
  IEEE Transactions on Device and Materials Reliability, 2014
• Soft-Error Performance Evaluation on Emerging Low Power Devices
  IEEE Transactions on Device and Materials Reliability, 2014
• Implications of BTI-Induced Time-Dependent Statistics on Yield Estimation of Digital Circuits
  IEEE Transactions on Electron Devices, 2014
• Hot carrier degradation in HfSiON∕TiN fin shaped field effect transistor with different substrate orientations
  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2009
• Discrete Dopant Effects on Statistical Variation of Random Telegraph Signal Magnitude
  IEEE Transactions on Electron Devices, 2007
• Gate sizing to radiation harden combinational logic
  IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2005
• Determination of key parameters for SEU occurrence using 3-D full cell SRAM simulations
  IEEE Transactions on Nuclear Science, 1999
• Critical charge calculations for a bipolar SRAM array
  IBM Journal of Research and Development, 1996