High-frequency SiGe:C HBTs with elevated extrinsic base regions
Authors:
- H. RückerHRH. Rücker
- B. HeinemannBHB. Heinemann
- R. BarthRBR. Barth
- D. KnollDKD. Knoll
- P. SchleyPSP. Schley
- R. ScholzRSR. Scholz
- B. TillackBTB. Tillack
- W. WinklerWWW. Winkler
- 30 June 2005
- journal article
- Published by Elsevier in Materials Science in Semiconductor Processing
- Vol. 8 (1-3) , 279-282
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- 3.9 ps SiGe HBT ECL ring oscillator and transistor design for minimum gate delayIEEE Electron Device Letters, 2003
- Bipolar transistor scaling for minimum switching delay and energy dissipation2003
- SiGe bipolar technology with 3.9 ps gate delay2003
- Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technologyIEEE Electron Device Letters, 2002