Composition dependences of ferroelectric and piezoelectric properties in 500 nm-thick x CeO 2 −(1− x )HfO 2 films deposited on (111)ITO//(111)YSZ substrates by sputtering method

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Abstract
The effect of x = Ce/(Hf+Ce) (0.15–0.25) on dielectric, ferroelectric, and piezoelectric properties was investigated together with the crystal structure for 500 nm-thick x CeO 2 −(1− x ) HfO 2 films. The films were deposited on (111) (indium tin oxide, ITO)//(111) (yttrium-stabilized zirconia, YSZ) substrates using the sputtering method without heating, followed by a post-heat treatment at 1000 °C. X-ray diffraction analysis showed that the films showed {200} diffraction peaks of tetragonal and/or orthorhombic (T./O.) phase. Lattice spacing of the {200} T./O . linearly increased with x value increasing. The relative dielectric constant reached a maximum at x = 0.22, while dielectric loss was below 0.07 irrespective of the x value. Ferroelectric property and piezoelectric response originating from the ferroelectricity were observed for the films with x = 0.15–0.22. Largest remnant polarization of 10 μC cm −2 and effective vertical piezoelectric constant, d 33, f , of 16 pm V −1 were obtained at x = 0.22 and 0.21, respectively.

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