Suppressing SiC crystal edge decomposition through pore-type crucible
Authors:
- Ning ZhangNZNing Zhang
- Xiufang ChenXCXiufang Chen
- Zheyang LiZLZheyang Li
- Xuejian XieXXXuejian Xie
- Xianglong YangXYXianglong Yang
- Wancheng YuWYWancheng Yu
- Xiaobo HuXHXiaobo Hu
- Guanglei ZhongGZGuanglei Zhong
- Le YuLYLe Yu
- Rui JinRJRui Jin
- Xiangang XuXXXiangang Xu
Abstract
No abstract availableFunding Information
- Key Technology Research and Development Program of Shandong Province
- National Natural Science Foundation of China (U23A20569)
This publication has 31 references indexed in Scilit:
- A study of nucleation at initial growth stage of SiC single crystal by physical vapor transportJournal of Crystal Growth, 2022
- Influence of the growth conditions on the formation of macro-steps on the growth interface of SiC-CrystalsJournal of Crystal Growth, 2021
- Thermal stress simulation of optimized SiC single crystal growth crucible structureJournal of Crystal Growth, 2018
- Study of spiral growth on 4H-silicon carbide on-axis substratesJournal of Crystal Growth, 2017
- Improvement of the thermal design in the SiC PVT growth processJournal of Crystal Growth, 2014
- Thermodynamic analysis of SiC polytype growth by physical vapor transport methodJournal of Crystal Growth, 2011
- Effective increase of single-crystalline yield during PVT growth of SiC by tailoring of temperature gradientJournal of Crystal Growth, 2004
- Raman Investigation of SiC PolytypesPhysica Status Solidi (a), 1997
- Simulation of Sublimation Growth of SiC Single CrystalsPhysica Status Solidi (b), 1997
- Growth of bulk SiCMaterials Science and Engineering: B, 1995