High‐Uniformity Threshold Switching HfO2‐Based Selectors with Patterned Ag Nanodots

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Abstract
High‐performance selector devices are essential for emerging nonvolatile memories to implement high‐density memory storage and large‐scale neuromorphic computing. Device uniformity is one of the key challenges which limit the practical applications of threshold switching selectors. Here, high‐uniformity threshold switching HfO2‐based selectors are fabricated by using e‐beam lithography to pattern controllable Ag nanodots (NDs) with high order and uniform size in the cross‐point region. The selectors exhibit excellent bidirectional threshold switching performance, including low leakage current (108), high endurance (>108 cycles), and fast switching speed (≈75 ns). The patterned Ag NDs in the selector help control the number of Ag atoms diffusing into HfO2 and confine the positions to form reproducible filaments. According to the statistical analysis, the Ag NDs selectors show much smaller cycle‐to‐cycle and device‐to‐device variations (CV < 10%) compared to control samples with nonpatterned Ag thin film. Furthermore, when integrating the Ag NDs selector with resistive switching memory in one‐selector‐one‐resistor (1S1R) structure, the reduced selector variation helps significantly reduce the bit error rate in 1S1R crossbar array. The high‐uniformity Ag NDs selectors offer great potential in the fabrication of large‐scale 1S1R crossbar arrays for future memory and neuromorphic computing applications.
Funding Information
  • National Natural Science Foundation of China (61851404, 91964104, 61974081)

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