An x-ray topographic study of β-SiC films on Si substrates
Authors:
- 1 March 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (5) , 1883-1890
Abstract
Defects in β-SiC films grown on Si substrates by chemical-vapor deposition have been investigated using x-ray double-crystal topography. Varying levels of dislocations are often observed in the form of channels, originating at the SiC/Si interface, which can be detected topographically regardless of the visible roughness in the film surface. It is found that rough surfaces are crystallographically more ‘‘flat,’’ on a macroscopic scale, compared to smooth surfaces which are often curved. Films in the latter group also contain fewer defects than the former, and are characterized mostly by misfit striations along [110] directions. A model for defect propagation is proposed connecting the observed topographic detail to the lattice mismatch, differences in thermal expansion, and the relative thickness of film and substrate.Keywords
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