Prethreshold Voltage as a Low-Component Count Temperature Sensitive Electrical Parameter Without Self-Heating

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Abstract
Temperature Sensitive Electrical Parameters (TSEPs) are promising for measurement of the IGBT chip temperature, Tchip. Many TSEPs have been proposed in the literature and most require current sensors, and convoluted hardware and data processing, which are associated with increased complexity and cost. In this letter, a new TSEP is proposed called pre-threshold TSEP, V$_{GE(pre-th)}$. V$_{GE(pre-th)}$ requires only a voltage sensor and a counter. Besides less hardware requirement, V$_{GE(pre-th)}$ does not suffer from self-heating – a problem that most TSEPs encounter. This letter presents the operation of V$_{GE(pre-th)}$ with the help of simulation. Experimental tests on a 3.3kV, 800A IGBT were conducted to characterize V$_{GE(pre-th)}$. It is shown that the new TSEP proposed has a sensitivity of -2.2mV/°C.

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