Analysis of the kink effect in MOS transistors
Authors:
- I.M. HafezIHI.M. Hafez
- G. GhibaudoGGG. Ghibaudo
- F. BalestraFBF. Balestra
- 1 March 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (3) , 818-821
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Numerical and analytical modelling of non ohmic MOSFET operation at liquid helium temperatureSolid-State Electronics, 1989
- A method for MOSFET parameter extraction at very low temperatureSolid-State Electronics, 1989
- Analytical modeling of the transconductance of short channel MOSFETs in the saturation regionSolid-State Electronics, 1989
- Analytical Modelling of the Kink Effect in MOS Transistors1989
- Model for hysteresis and kink behavior of MOS transistors operating at 4.2 KIEEE Transactions on Electron Devices, 1988
- New method for the extraction of MOSFET parametersElectronics Letters, 1988
- Influence of substrate freeze-out on the characteristics of MOS transistors at very low temperaturesSolid-State Electronics, 1987
- The Properties of Silicon-on-Sapphire Substrates, Devices, and Integrated Circuits1981
- Influence of the floating substrate potential on the characteristics of ESFI MOS transistorsSolid-State Electronics, 1975
- p-n junctions at very low temperaturesBritish Journal of Applied Physics, 1961