An ultra-low power InAs/AlSb HEMT W-band low-noise amplifier
Authors:
- J.B. HackerJHJ.B. Hacker
- J. BergmanJBJ. Bergman
- G. NagyGNG. Nagy
- G. SullivanGSG. Sullivan
- C. KadowCKC. Kadow
- H.-K. LinHLH.-K. Lin
- A.C. GossardAGA.C. Gossard
- M. RodwellMRM. Rodwell
- B. BrarBBB. Brar
- 1 January 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 0149645X,p. 1029-1032
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- A 110-GHz AlSb/InAs MMIC amplifier2005
- An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifierIEEE Microwave and Wireless Components Letters, 2004
- InAs/AlSb HFETs with f/sub τ/ and f/sub max/ above 150 GHz for low-power MMICs2003
- Video-rate passive millimeter-wave imager2003
- Metamorphic AlSb/InAs HEMT for low-power, high-speed electronics2003
- Ultra low power low noise amplifiers for wireless communications2002
- AlSb/InAs HEMT's for low-voltage, high-speed applicationsIEEE Transactions on Electron Devices, 1998
- High-performance Ka-band monolithic low-noise amplifiers using 0.2-μm dry-recessed GaAs PHEMTsIEEE Microwave and Guided Wave Letters, 1996
- A high performance and low DC power V-band MMIC LNA using 0.1 mu m InGaAs/InAlAs/InP HEMT technologyIEEE Microwave and Guided Wave Letters, 1993
- A high-performance monolithic Q-band InP-based HEMT low-noise amplifierIEEE Microwave and Guided Wave Letters, 1993