Measurement of the boron distribution in 10B-implanted silicon by the (n,α) nuclear reaction
Authors:
- G. MezeyGMG. Mezey
- Z. Szökefalvi-NagyZSZ. Szökefalvi-Nagy
- Cs. BadinkaCBCs. Badinka
- 1 December 1973
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 19 (1) , 173-175
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Boron atom distributions in ion-implanted silicon by the (n,4He) nuclear reactionApplied Physics Letters, 1972
- Quantitative analysis of boron in solids by autoradiographyJournal of Materials Science, 1972
- Application of solid-state track detectors for measuring angular distributions of alpha-particle groups from nuclear reactionsNuclear Instruments and Methods, 1968
- The mechanism of anodic oxidationJournal of Physics and Chemistry of Solids, 1962