Low temperature chemical vapor deposition of tungsten carbide for copper diffusion barriers
Authors:
- J.G EkerdtJEJ.G Ekerdt
- I EmeshIEI Emesh
- 1 October 2001
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 397 (1-2) , 109-115
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Precursor chemistry and film growth with (methylcyclopentadienyl) (1,5-cyclooctadiene)iridiumJournal of Vacuum Science & Technology A, 2000
- Low temperature metal-organic chemical vapor deposition of tungsten nitride as diffusion barrier for copper metallizationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1999
- Barrier Properties of Very Thin Ta and TaN Layers Against Copper DiffusionJournal of the Electrochemical Society, 1998
- Synthesis of ditungsten carbide by controlled decomposition of Cp2W2(CO)4 (dmad) under a hydrogen atmosphereJournal of Materials Science, 1998
- Diffusion barrier properties of TaC between Si and CuThin Solid Films, 1997
- Diffusion barrier property of TaN between Si and CuApplied Surface Science, 1996
- Diffusion barrier effects of transition metals for Cu/M/Si multilayers (M=Cr, Ti, Nb, Mo, Ta, W)Applied Physics Letters, 1994
- Advanced multilayer metallization schemes with copper as interconnection metalThin Solid Films, 1993
- Tungsten deposition by organometallic chemical vapour deposition with organotungsten precursorsMaterials Science and Engineering: B, 1993
- Comparison of high vacuum and ultra-high-vacuum tantalum diffusion barrier performance against copper penetrationJournal of Applied Physics, 1993