Direct observation of a silicon-sapphire hetero-epitaxial interface by high resolution transmission electron microscopy
Authors:
- 16 January 1981
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 63 (1) , K3-K6
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Electron-optical imaging of Ti6O11at 1·6 Å point-to-point resolutionPhilosophical Magazine A, 1978
- Cross-sectional electron microscopy of silicon on sapphireApplied Physics Letters, 1975
- The preparation and properties of chemically vapor deposited silicon on sapphire and spinelJournal of Crystal Growth, 1971
- The Theoretical Resolution Limit of the Electron MicroscopeJournal of Applied Physics, 1949