Residual Stress in GaAs Layer Grown on 4°-Off (100)Si by MBE
Authors:
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
- Vol. 91
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Growth and properties of single domain GaAs, AlGaAs and their heterostructures on Si by MOCVD and MBESurface Science, 1986
- The Effect of Lattice Misfit on Lattice Parameters and Photoluminescence Properties of Atomic Layer Epitaxy Grown ZnSe on (100)GaAs SubstratesJapanese Journal of Applied Physics, 1986
- Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxyJournal of Applied Physics, 1985
- Growth of Single Domain GaAs on 2-inch Si(100) Substrate by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1985
- AlGaAs double-heterostructure diode lasers fabricated on a monolithic GaAs/Si substrateApplied Physics Letters, 1984
- The effects of processing stresses on residual degradation in long-lived Ga1−xAlxAs lasersApplied Physics Letters, 1979
- Injection-Enhanced Dislocation Glide under Uniaxial Stress in GaAs–(GaAl)As Double Heterostructure LaserJapanese Journal of Applied Physics, 1977
- Structure of vapor-deposited GaxIn1−xAs crystalsJournal of Applied Physics, 1974
- Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or CompoundsJournal of Applied Physics, 1970
- Analysis of Bi-Metal ThermostatsJournal of the Optical Society of America, 1925