A monolithic, back-gated diamond field-effect transistor for tunable color centers
Authors:
- D. OingDOD. Oing
- M. NeyMNM. Ney
- G. BendtGBG. Bendt
- S. SchulzSSS. Schulz
- M. GellerMGM. Geller
- N. WöhrlNWN. Wöhrl
- A. LorkeALA. Lorke
- 1 November 2021
- journal article
- research article
- Published by Elsevier in Diamond and Related Materials
- Vol. 119
Abstract
No abstract availableKeywords
Funding Information
- Deutsche Forschungsgemeinschaft
This publication has 37 references indexed in Scilit:
- The nitrogen-vacancy colour centre in diamondPhysics Reports, 2013
- High-Current Metal Oxide Semiconductor Field-Effect Transistors on H-Terminated Diamond Surfaces and Their High-Frequency OperationJapanese Journal of Applied Physics, 2012
- Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density by Al2O3 Passivation LayerJapanese Journal of Applied Physics, 2012
- Boron incorporation issues in diamond when TMB is used as precursor: Toward extreme doping levelsDiamond and Related Materials, 2012
- Stark Shift Control of Single Optical Centers in DiamondPhysical Review Letters, 2006
- Electrical Properties of Diamond Surfaces Functionalized with Molecular MonolayersThe Journal of Physical Chemistry B, 2005
- DNA-modified nanocrystalline diamond thin-films as stable, biologically active substratesNature Materials, 2002
- High quality chemical vapor deposition diamond growth on iron and stainless steel substratesJournal of Applied Physics, 2002
- Diamond growth with boron additionInternational Journal of Refractory Metals and Hard Materials, 1998
- Effect of nitrogen on the growth of diamond filmsApplied Physics Letters, 1994