A novel nanoscale SOI MOSFET with Si embedded layer as an effective heat sink
Authors:
- 28 November 2014
- journal article
- research article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 102 (8) , 1394-1406
Abstract
A novel structure such as nanoscale silicon-on-insulator (SOI) MOSFET with silicon embedded layer (SEL-SOI) is proposed to reduce self-heating effects (SHEs) successfully. The SEL as a useful heat sink with high thermal conductivity is inserted inside the buried oxide. The SEL acts like a heat sink and is therefore easily able to distribute the lattice heat throughout the device. We noticed excellent improvement in the thermal performance of the device using two-dimensional and two-carrier device simulation. Our simulation results show that SHE has been dramatically reduced in the proposed structure. In regard to the simulated results, the SEL-SOI structure has shown good performance in comparison with the conventional SOI (C-SOI) structure when utilised in the high temperature applications.Keywords
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