Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs
- 27 January 2016
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 63 (3) , 1209-1216
Abstract
The fin-edge roughness (FER) and the TiN metal grain work function (MGW)-induced variability affecting OFF and ON device characteristics are studied and compared between a 10.4-nm gate length In0.53Ga0.47As FinFET and a 10.7-nm gate length Si FinFET. We have analyzed the impact of variability by assessing five figures of merit (threshold voltage, subthreshold slope, OFF-current, drain-induced-barrier-lowering, and ON-current) using the two state-of-the-art in-house-build 3-D simulation tools based on the finite-element method. Quantum-corrected 3-D drift-diffusion simulations are employed for variability studies in the subthreshold region while, in the ON-region, we use quantum-corrected 3-D ensemble Monte Carlo simulations. The In0.53Ga0.47As FinFET is more resilient to the FER and MGW variability in the subthreshold compared with the Si FinFET due to a stronger quantum carrier confinement present in the In0.53Ga0.47As channel. However, the ON-current variability is between 1.1 and 2.2 times larger for the In0.53Ga0.47As FinFET than for the Si counterpart, respectively.Keywords
Funding Information
- Engineering and Physical Sciences Research Council (EP/I010084/1)
- Spanish Ministerio de Economía y Competitividad and FEDER Funds (TEC2014-59402-JIN, TIN2013-41129-P)
- Xunta de Galicia and FEDER Funds (GRC 2014/008)
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