Low-temperature processable oxide-based devices provide a promising avenue to monolithic 3D (M3D) IC chips. Here, oxide-based complementary metal-oxide-semiconductor (CMOS) logic circuits consisting of M3D stacked field effect transistors (FETs) – SnO

${}_{\mathbf {x}}$

p-FET at the bottom and IGZO n-FET at the top are reported. By controlling the deposition process and keeping the entire fabrication thermal budget below

$250~^{\circ }$

C suitable for BEOL integration process, excellent uniformity and matched threshold voltage (

${V} _{\mathbf {th}}$

) of 0.5 V are achieved for both types of devices. As a result, minimally skewed operation of the stacked inverter is ensued, with voltage gain reaching a decently high value of 100.6 V/V at a V

${}_{\mathbf {DD}}$

of 1.5 V. Key logic gates utilizing the M3D stacked FETs including NAND, NOR, and SRAM cell were first demonstrated (SnO

${}_{\mathbf {x}}$

p-FET based), showing robust and reliable logical functionality, together with a three-stage ring oscillator achieving a ringing frequency up to 62.5 kHz at a

${V} _{\mathbf {DD}}$

of 2.5 V.

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