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Breaking the Drivability-Threshold-Voltage Trade-off in 40 nm Vertical Gate-All-Around Oxide FETs via Spacer-Defined Offset Engineering
Publication with shared reference
10.1021/acsami.6c13898
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Breaking the Drivability-Threshold-Voltage Trade-off in 40 nm Vertical Gate-All-Around Oxide FETs via Spacer-Defined Offset Engineering
Publication with shared reference
10.1021/acsami.6c13898
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Breaking the Drivability-Threshold-Voltage Trade-off in 40 nm Vertical Gate-All-Around Oxide FETs via Spacer-Defined Offset Engineering
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