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  3. Conditions for high yield of selective-area epitaxy InAs nanowires on SiOx/Si(111) substrates
  4. Publication with shared reference
  5. 10.1088/0957-4484/26/46/465301
  1. Home
  2. Publications
  3. Conditions for high yield of selective-area epitaxy InAs nanowires on SiOx/Si(111) substrates
  4. Publication with shared reference
  5. 10.1088/0957-4484/26/46/465301

Publications with shared reference:

Conditions for high yield of selective-area epitaxy InAs nanowires on SiOx/Si(111) substrates

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