Conditions for high yield of selective-area epitaxy InAs nanowires on SiOx/Si(111) substrates
Authors:
- 28 October 2015
- journal article
- research article
- Published by IOP Publishing in Nanotechnology
- Vol. 26 (46) , 465301
Abstract
Experimental data and a model are presented which define the boundary values of V/III flux ratio and growth temperature for droplet-assisted nucleation of InAs semiconductor nanowires in selective-area epitaxy on SiO x /Si (111) substrates by molecular beam epitaxy. Within these boundaries, the substrate receives a balanced flux of group III and V materials allowing the growth of vertically oriented nanowires as compared to the formation of droplets or crystallites.Keywords
Funding Information
- Natural Sciences and Engineering Research Council of Canada (RGPIN/311939-2013)
- Russian Foundation for Basic Research (13-02-12045, 15-52-78057 and 15-52-53041)
This publication has 36 references indexed in Scilit:
- Self-catalysed InAs 1-x Sb x nanowires grown directly on bare Si substratesMaterials Research Bulletin, 2014
- Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxyApplied Physics Letters, 2013
- Self-catalyzed VLS grown InAs nanowires with twinning superlatticesNanotechnology, 2013
- Au-free InAs nanowires grown in In-particle-assisted vapor-liquid-solid mode: growth, structure, and electrical propertyAIP Advances, 2013
- III–V nanowire photovoltaics: Review of design for high efficiencyPhysica Status Solidi (RRL) – Rapid Research Letters, 2013
- InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substratesJournal of Crystal Growth, 2012
- A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and OpportunitiesIEEE Journal of Selected Topics in Quantum Electronics, 2011
- Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxyNanotechnology, 2010
- Au-catalyst-free epitaxy of InAs nanowiresJournal of Crystal Growth, 2010
- Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysisJournal of Applied Physics, 2007