F. P. Netzer
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
Research Interests
F. P. Netzer has a total of 41 co-authors. Here are the top co-authors by number of shared publications:
- M. G. Ramsey
Institut für Experimentalphysik, Karl-Franzens Universität Graz, Universitätsplatz 5, A-8010 Graz, Austria
12 shared publications - Georg Koller
University of Graz
3 shared publications - Georg Kresse
Universität Wien
3 shared publications - Svetlozar Surnev
NAWI Graz, Institute of Physics, University of Graz, Universitätsplatz 5, 8010 Graz, Austria
3 shared publications D. Steinmüller
Institut für Physikalische Chemie, Universität Innsbruck, A-6020 Innsbruck, Austria
2 shared publications- Jan Ivanco
Slovak Academy of Sciences
2 shared publications
Latest Publications
- 12 March 2009
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 21 (13) , 134008
Two-dimensional manganese oxide nanolayers on Pd(100): the surface phase diagram
Two-dimensional manganese oxide layers have been grown on Pd(100) and have been characterized by means of scanning tunnelling microscopy, low energy electron diffraction and x-ray photoelectron spectroscopy (XPS). The complex surface phase diagram of MnO(x) on Pd(100) is reported, where nine different novel Mn oxide phases have been detected as a function of the chemical potential of oxygen μ(O). Three regions of the chemical potential of oxygen can be identified, in which structurally related oxide phases are formed, often in coexistence at the surface. The different regions of μ(O) are reflected in the oxidation states of the respective Mn oxide nanolayers as revealed by the Mn 2p and O 1s XPS binding energies. The MnO(x) nanolayers form two-dimensional wetting layers and it is speculated that they mediate the epitaxial growth of MnO on Pd(100) by providing structurally graded interfaces.
- 12 March 2009
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 21 (13) , 134008
Two-dimensional manganese oxide nanolayers on Pd(100): the surface phase diagram
Two-dimensional manganese oxide layers have been grown on Pd(100) and have been characterized by means of scanning tunnelling microscopy, low energy electron diffraction and x-ray photoelectron spectroscopy (XPS). The complex surface phase diagram of MnO(x) on Pd(100) is reported, where nine different novel Mn oxide phases have been detected as a function of the chemical potential of oxygen μ(O). Three regions of the chemical potential of oxygen can be identified, in which structurally related oxide phases are formed, often in coexistence at the surface. The different regions of μ(O) are reflected in the oxidation states of the respective Mn oxide nanolayers as revealed by the Mn 2p and O 1s XPS binding energies. The MnO(x) nanolayers form two-dimensional wetting layers and it is speculated that they mediate the epitaxial growth of MnO on Pd(100) by providing structurally graded interfaces.
- 1 April 2008
- Published by Elsevier in Thin Solid Films
- Vol. 516 (12) , 4247-4251
Optical properties of sexithiophene films grown on ordered and disordered TiO2(110) surfaces
- 1 April 2008
- Published by Elsevier in Thin Solid Films
- Vol. 516 (12) , 4247-4251
Optical properties of sexithiophene films grown on ordered and disordered TiO2(110) surfaces
- 1 September 2004
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 96 (5) , 2716-2724
Sexithiophene films on clean and oxidized Si(111) surfaces: Growth and electronic structure
The growth and the electronic properties of sexithiophene thin films on silicon surfaces have been studied by angle resolved ultraviolet photoelectron spectroscopy while morphology and crystalline order have been assessed by atomic force microscopy and x-ray diffraction. The influence of the surface modification of the substrate as well as of the growth temperature and the growth rate were investigated in ultrahigh vacuum through controlled multistep growth sequences ranging from (sub)monolayer coverage up to thick films. Depending on the preparation, two electronically distinct sexithiophene films could be produced, as revealed by their ionization potentials which differed by . The evolution of the electronic energy levels with film thickness is considered in terms of the concepts of interface dipole and band bending, with the latter being argued to be inappropriate. Irrespective of substrate or growth conditions the thick films were found to all have the same work function of , which is related to near vertically oriented molecules on the films surface. Against general expectations grown at a low rate on the reactive substrate and those grown at high rates on the oxide surface produces films that are more uniform and crystalline than those grown at low rates on the passive oxidized surfaces. The latter promotes the formation of small three-dimensional crystallites and a much poorer morphology for planar devices.- 1 September 2004
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 96 (5) , 2716-2724
Sexithiophene films on clean and oxidized Si(111) surfaces: Growth and electronic structure
The growth and the electronic properties of sexithiophene thin films on silicon surfaces have been studied by angle resolved ultraviolet photoelectron spectroscopy while morphology and crystalline order have been assessed by atomic force microscopy and x-ray diffraction. The influence of the surface modification of the substrate as well as of the growth temperature and the growth rate were investigated in ultrahigh vacuum through controlled multistep growth sequences ranging from (sub)monolayer coverage up to thick films. Depending on the preparation, two electronically distinct sexithiophene films could be produced, as revealed by their ionization potentials which differed by . The evolution of the electronic energy levels with film thickness is considered in terms of the concepts of interface dipole and band bending, with the latter being argued to be inappropriate. Irrespective of substrate or growth conditions the thick films were found to all have the same work function of , which is related to near vertically oriented molecules on the films surface. Against general expectations grown at a low rate on the reactive substrate and those grown at high rates on the oxide surface produces films that are more uniform and crystalline than those grown at low rates on the passive oxidized surfaces. The latter promotes the formation of small three-dimensional crystallites and a much poorer morphology for planar devices.- 1 April 2004
- Published by Elsevier in Surface Science
- Vol. 555 (1-3) , 118-134
V2O3(0001) surface terminations: a density functional study
- 1 April 2004
- Published by Elsevier in Surface Science
- Vol. 555 (1-3) , 118-134
V2O3(0001) surface terminations: a density functional study
- 30 December 2003
- Published by American Physical Society (APS) in Physical Review B
- Vol. 68 (23) , 235416
Vanadium surface oxides on Pd(111): A structural analysis
Scanning tunneling microscopy studies of vanadium oxides grown on Pd(111) show interesting structures especially in the low-coverage region. Evaporation of V in an oxygen background at elevated sample temperature results in the formation of a nonperiodic honeycomb-like structure growing from the steps, which starts to transform into an ordered phase at a vanadium coverage of (monolayer). At 0.31 ML the entire surface is covered by this well-ordered open structure. Annealing this structure in atmosphere transforms the phase into a surface oxide with periodicity, whose optimal coverage is reached at 0.5 ML vanadium. Models for both ordered structures have been suggested before on the basis of ab initio density-functional theory (DFT) calculations and molecular-dynamics simulations and these models are now unambiguously confirmed by quantitative low-energy electron-diffraction (LEED) analyses. In the phase, the V atoms are surrounded by four oxygen atoms in an unusual tetrahedral coordination leading to a stoichiometry. This tetrahedral coordination allows the oxide to adopt open loosely packed two-dimensional (2D) and 1D structures, which are stabilized by the surface-oxide interface energy. Furthermore, it is shown that state of the art DFT calculations can indeed predict complex structures exactly as well as that modern quantitative LEED is capable of dealing with very large unit cells.- 30 December 2003
- Published by American Physical Society (APS) in Physical Review B
- Vol. 68 (23) , 235416
Vanadium surface oxides on Pd(111): A structural analysis
Scanning tunneling microscopy studies of vanadium oxides grown on Pd(111) show interesting structures especially in the low-coverage region. Evaporation of V in an oxygen background at elevated sample temperature results in the formation of a nonperiodic honeycomb-like structure growing from the steps, which starts to transform into an ordered phase at a vanadium coverage of (monolayer). At 0.31 ML the entire surface is covered by this well-ordered open structure. Annealing this structure in atmosphere transforms the phase into a surface oxide with periodicity, whose optimal coverage is reached at 0.5 ML vanadium. Models for both ordered structures have been suggested before on the basis of ab initio density-functional theory (DFT) calculations and molecular-dynamics simulations and these models are now unambiguously confirmed by quantitative low-energy electron-diffraction (LEED) analyses. In the phase, the V atoms are surrounded by four oxygen atoms in an unusual tetrahedral coordination leading to a stoichiometry. This tetrahedral coordination allows the oxide to adopt open loosely packed two-dimensional (2D) and 1D structures, which are stabilized by the surface-oxide interface energy. Furthermore, it is shown that state of the art DFT calculations can indeed predict complex structures exactly as well as that modern quantitative LEED is capable of dealing with very large unit cells.- 16 October 2003
- Published by American Physical Society (APS) in Physical Review B
- Vol. 68 (15) , 155417
Estimating soft-mode frequencies of surface overlayers by means of photoelectron diffraction: The(2×2)surface-V2O3/Pd(111)
The surface- layer, an interface-mediated vanadium oxide phase observed on Pd(111) in the submonolayer coverage range, has been investigated by means of angle scanned x-ray photoelectron diffraction (XPD), which gives a direct experimental confirmation of the model derived by scanning tunnelling microscopy (STM) and density functional calculations (DFT), with a quantitative determination of the V-O interlayer spacing. In addition, XPD measurements compared to single scattering cluster–spherical wave (SSC-SW) simulations revealed a peculiar broadening of V-O forward scattering (FS) maxima that is limited to azimuthal scans and that cannot be accounted for by isotropic Debye-Waller attenuation of the diffraction features. However, the existence of a soft phonon mode in the overlayer, associated with substantial in-plane displacements from equilibrium of O scatterers with respect to V emitters, could explain the experimental observation. The existence of such a soft mode has been confirmed by DFT calculations. It consists of an in-plane quasirotation around the V emitter of the three nearest-neighbor O atoms, and the estimated DFT frequency amounts to The XPD data have been analyzed by means of SSC-SW simulations wherein a harmonic oscillator model has been employed to approximate the effect of the soft phonon mode on XPD curves. As a result, an experimental determination of the frequency of the mode has been obtained which is of the same order of magnitude as the DFT predicted frequency. Moreover, the sensitivity of XPD scans to the correlation of soft-mode atomic displacements has been studied, leading to the estimate of a “soft-mode XPD coherence length” for the system under investigation. This work therefore explores an application of XPD as a surface spectroscopy sensitive to vibrational soft modes.- 16 October 2003
- Published by American Physical Society (APS) in Physical Review B
- Vol. 68 (15) , 155417
Estimating soft-mode frequencies of surface overlayers by means of photoelectron diffraction: The(2×2)surface-V2O3/Pd(111)
The surface- layer, an interface-mediated vanadium oxide phase observed on Pd(111) in the submonolayer coverage range, has been investigated by means of angle scanned x-ray photoelectron diffraction (XPD), which gives a direct experimental confirmation of the model derived by scanning tunnelling microscopy (STM) and density functional calculations (DFT), with a quantitative determination of the V-O interlayer spacing. In addition, XPD measurements compared to single scattering cluster–spherical wave (SSC-SW) simulations revealed a peculiar broadening of V-O forward scattering (FS) maxima that is limited to azimuthal scans and that cannot be accounted for by isotropic Debye-Waller attenuation of the diffraction features. However, the existence of a soft phonon mode in the overlayer, associated with substantial in-plane displacements from equilibrium of O scatterers with respect to V emitters, could explain the experimental observation. The existence of such a soft mode has been confirmed by DFT calculations. It consists of an in-plane quasirotation around the V emitter of the three nearest-neighbor O atoms, and the estimated DFT frequency amounts to The XPD data have been analyzed by means of SSC-SW simulations wherein a harmonic oscillator model has been employed to approximate the effect of the soft phonon mode on XPD curves. As a result, an experimental determination of the frequency of the mode has been obtained which is of the same order of magnitude as the DFT predicted frequency. Moreover, the sensitivity of XPD scans to the correlation of soft-mode atomic displacements has been studied, leading to the estimate of a “soft-mode XPD coherence length” for the system under investigation. This work therefore explores an application of XPD as a surface spectroscopy sensitive to vibrational soft modes.- 21 July 2003
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (3) , 563-565
Band alignment on a nanoscopically patterned inorganic–organic interface
The band alignment of organic semiconductors on a nanoscopically patterned surface is investigated for submonolayer coverages to thin molecular films of bithiophene, using ultraviolet photoelectron spectroscopy and work function measurements. The stripe phase, used as a substrate, consists of alternating stripes of clean and oxygen passivated copper, with a respective stripe diameter of three to four times the molecular length. For the first molecular layer, a superposition of bithiophene spectra, offset from each other by 1 eV, reflecting the interface dipole differences on Cu (110) and was found. However, after completion of the second layer, the observed band alignment between the substrate and the overlayer is determined by the average interface potential and the underlying substrate pattern is obscured.- 21 July 2003
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (3) , 563-565
Band alignment on a nanoscopically patterned inorganic–organic interface
The band alignment of organic semiconductors on a nanoscopically patterned surface is investigated for submonolayer coverages to thin molecular films of bithiophene, using ultraviolet photoelectron spectroscopy and work function measurements. The stripe phase, used as a substrate, consists of alternating stripes of clean and oxygen passivated copper, with a respective stripe diameter of three to four times the molecular length. For the first molecular layer, a superposition of bithiophene spectra, offset from each other by 1 eV, reflecting the interface dipole differences on Cu (110) and was found. However, after completion of the second layer, the observed band alignment between the substrate and the overlayer is determined by the average interface potential and the underlying substrate pattern is obscured.- 4 April 2001
- Published by American Physical Society (APS) in Physical Review B
- Vol. 63 (16) , 165320
Trimer adatom structure of phosphorus on Ge(111)
The surface structures of phosphorus on a surface have been investigated by scanning tunneling microscopy (STM), low-energy electron diffraction, and Auger electron spectroscopy. Phosphorus adatoms are stable on the Ge(111) surface up to ∼350 °C, where desorption and/or diffusion into the bulk sets in. The P adatoms cluster into small islands and form a local structure. The stable bonding configuration of phosphorus on Ge(111) between room temperature and ∼260 °C is the so-called trimer geometry, where the P adatoms form triangular trimer units above second-layer Ge atoms, thus saturating all the Ge surface dangling bonds in the local array. However, only poor long-range order is obtained. The trimers replace the Ge adatoms of the reconstruction as revealed in atomically resolved STM images. The P trimer structure on Ge(111) is discussed in relation to the substitutional adsorption geometry of P on Si(111), and it is argued that the structure is the result of the larger tensile stress on the Ge surface and the weaker Ge-P bond strength as compared to the Si case.- 4 April 2001
- Published by American Physical Society (APS) in Physical Review B
- Vol. 63 (16) , 165320
Trimer adatom structure of phosphorus on Ge(111)
The surface structures of phosphorus on a surface have been investigated by scanning tunneling microscopy (STM), low-energy electron diffraction, and Auger electron spectroscopy. Phosphorus adatoms are stable on the Ge(111) surface up to ∼350 °C, where desorption and/or diffusion into the bulk sets in. The P adatoms cluster into small islands and form a local structure. The stable bonding configuration of phosphorus on Ge(111) between room temperature and ∼260 °C is the so-called trimer geometry, where the P adatoms form triangular trimer units above second-layer Ge atoms, thus saturating all the Ge surface dangling bonds in the local array. However, only poor long-range order is obtained. The trimers replace the Ge adatoms of the reconstruction as revealed in atomically resolved STM images. The P trimer structure on Ge(111) is discussed in relation to the substitutional adsorption geometry of P on Si(111), and it is argued that the structure is the result of the larger tensile stress on the Ge surface and the weaker Ge-P bond strength as compared to the Si case.- 21 August 2000
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (8) , 1212-1214
Influence of oxygen on band alignment at the organic/aluminum interface
The presence of adventitious oxygen is inevitable when organic/metal interfaces are formed by evaporation in high vacuum (10−6 mbar.). In this letter, we highlight the importance of this oxygen for band alignment, and hence, performance, in organic-based devices. The influence of controlled amounts of oxygen on band alignment in benzene/aluminum model cathode interfaces has been studied using ultraviolet photoemission in ultrahigh vacuum. We show that even small amounts of oxygen significantly lower the aluminum work function with concomitant improvement in band alignment.
- 21 August 2000
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (8) , 1212-1214
Influence of oxygen on band alignment at the organic/aluminum interface
The presence of adventitious oxygen is inevitable when organic/metal interfaces are formed by evaporation in high vacuum (10−6 mbar.). In this letter, we highlight the importance of this oxygen for band alignment, and hence, performance, in organic-based devices. The influence of controlled amounts of oxygen on band alignment in benzene/aluminum model cathode interfaces has been studied using ultraviolet photoemission in ultrahigh vacuum. We show that even small amounts of oxygen significantly lower the aluminum work function with concomitant improvement in band alignment.
- 14 February 2000
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (7) , 927-929
Band alignment at the organic-inorganic interface
The band alignment of the bithiophene interface with a diverse range of substrates has been determined by a combination of ultraviolet photoemission and work function measurements. Not only is vacuum level alignment clearly shown to be invalid but also any sort of linear relationship between band alignment and substrate work function is shown not to be the case. Rather, the alignment is determined by the interface dipole, which is specific to the interaction at the inorganic-organic interface. The interface dipoles, which always appear, while dominated by the first monolayer interaction, are completed after two to three monolayers. As the ionization potentials of the films are shown to be constant, it is argued that a simple work function measurement, for an organic film on a particular substrate, quantifies the band alignment.
- 14 February 2000
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (7) , 927-929
Band alignment at the organic-inorganic interface
The band alignment of the bithiophene interface with a diverse range of substrates has been determined by a combination of ultraviolet photoemission and work function measurements. Not only is vacuum level alignment clearly shown to be invalid but also any sort of linear relationship between band alignment and substrate work function is shown not to be the case. Rather, the alignment is determined by the interface dipole, which is specific to the interaction at the inorganic-organic interface. The interface dipoles, which always appear, while dominated by the first monolayer interaction, are completed after two to three monolayers. As the ionization potentials of the films are shown to be constant, it is argued that a simple work function measurement, for an organic film on a particular substrate, quantifies the band alignment.