Alois Krost

Strain in lattice matched and mismatched AlInN/GaN Bragg mirror structures were studied by in situ curvature and various ex situ x-ray measurements. In the case of lattice mismatched structures considerable deviations of the in-plane lattice parameters were evidenced near the surface region as well as in depth using x-ray grazing incidence and x-ray transmission scattering in Laue geometry. The experimental findings are explained in terms of partial stress relaxation of the AlInN/GaN Bragg layer stack with respect to the underlying GaN buffer and a mutual tensioning of the GaN and AlInN layers with respect to each other.

This report concerns investigations of the activation process of nerve cells cultured on large planar interdigitated electrodes. Cultured neurons from embryonic rat cerebral cortex form electrophysiologically active networks after one week in vitro. The treatment with antagonists to ionotropic glutamate and GABA_A receptors blocks synaptic neurotransmission without affecting intrinsic excitability of neurons. Standard stimulation parameters, which were previously determined to trigger a generalized network response in control networks, were ineffective for activation of networks under a synaptic activity blockade. Here we show that in these conditions a pulse sequence of ten biphasic pulses with amplitude of ±2.2 V is adequate for global network stimulation, without cell damage. In specially designed compartment cultures we analyzed further the stimulation process in control and synaptically blocked networks with cell bodies spatially separated from the electrodes. Our results suggest that the direct stimulation of few neurons trigger network-wide responses by the activation of synaptic connections. Further, the stimulation of axonal neuritic extensions is sufficient to active single neurons.

ZnO as a direct wide-band-semiconductor with its band gap of 3.3 eV at room temperature is a promising optoelectronic material. The main obstacle in the ZnO system is its lack of achieving reproducible p-type conductivity. The main reasons for this are the high residual intrinsic and extrinsic defect concentrations which are still not completely understood.Homoepitaxial growth of ZnO and thus minimization of intrinsic defects due to lattice mismatch and incorporation of residual substrate species could be a solution to overcome these problems. Despite the availability of ZnO bulk single crystals reports regarding ZnO homoepitaxy are still quite rare. In this paper we report on a successful homoepitaxial growth of ZnO thin films by chemical vapor deposition (CVD).Atomic force microscopy shows that two-dimensional epitaxial growth was achieved without any additional buffer layer. With a rocking curve full width at half maximum (FWHM) of 17 arcsec the deposited films show a superior crystalline quality compared to its substrate. The optical quality of the epitaxial films has been characterized laterally by cathodoluminescence and spectrally by photoluminescence. Excitonic emissions at 4K are as narrow as 110 μeV. A dependence of the appearance of excitonic emissions from the growth polarity can be shown which is attributed to different incorporation rates of extrinsic defects.