G. Cheng
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
G. Cheng has a total of 12 co-authors. Here are the top co-authors by number of shared publications:
- Eric Stern
Departments of Physics, Yale University, New Haven, USA
2 shared publications - Mark A. Reed
Department of Electrical Engineering, Yale University, New Haven, CT 06511, USA
2 shared publications C. Li
University of Southern California Department of Electrical Engineering-Electrophysics Building OHE 106 Mail Code 1455, University Park, Los Angeles, California 90089
1 shared publicationC. Zhou
University of Southern California Department of Electrical Engineering-Electrophysics Building OHE 106 Mail Code 1455, University Park, Los Angeles, California 90089
1 shared publication- Daniel Turner-Evans
Affiliation Department of Molecular, Cell and Developmental Biology, University of California Santa Cruz, Santa Cruz, California, United States of America
1 shared publication E. Broomfield
Yale University Department of Electrical Engineering 15 Prospect Street, P.O. Box 208284, New Haven, Connecticut 06520-8284 and Department of Applied Physics 15 Prospect Street, P.O. Box 208284, New Haven, Connecticut 06520-8284
1 shared publication
Latest Publications
- 9 September 2006
- Published by Springer Nature in Applied Physics A
- Vol. 85 (3) , 233-240
Indium oxide nanostructures
- 9 September 2006
- Published by Springer Nature in Applied Physics A
- Vol. 85 (3) , 233-240
Indium oxide nanostructures
- 1 January 2006
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
- Vol. 24 (1) , 231-236
Methods for fabricating Ohmic contacts to nanowires and nanotubes
A comparison of methods to create Ohmic contacts to semiconductor nanowires (NWs) and carbon nanotubes (CNTs) is presented. A lift-off metallization was used to contact GaN and NWs and CNTs using electron-beam (e-beam) or optical lithography. In order to render the metal-semiconductor contacts Ohmic, e-beam-processed devices are found to require a postfabrication, high-temperature anneal, whereas the use of an oxygen plasma prior to metallization is found to be crucial for devices defined by optical lithography.- 1 January 2006
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
- Vol. 24 (1) , 231-236
Methods for fabricating Ohmic contacts to nanowires and nanotubes
A comparison of methods to create Ohmic contacts to semiconductor nanowires (NWs) and carbon nanotubes (CNTs) is presented. A lift-off metallization was used to contact GaN and NWs and CNTs using electron-beam (e-beam) or optical lithography. In order to render the metal-semiconductor contacts Ohmic, e-beam-processed devices are found to require a postfabrication, high-temperature anneal, whereas the use of an oxygen plasma prior to metallization is found to be crucial for devices defined by optical lithography.