Shih-Lin Chang

The covalent electron density, which makes Si(222) measurable, is subject to laser excitation. The three-wave Si(222)/(13 {\overline 1}) diffraction at 7.82 keV is used for phase measurements. It is found that laser excitation causes a relative phase change of around 4° in Si(222) in the first 100 ps of excitation and this is gradually recovered over several nanoseconds. This phase change is due to laser excitation of covalent electrons around the silicon atoms in the unit cell and makes the electron density deviate further from the centrosymmetric distribution.

This work reports an unconventional defect engineering approach using synchrotron-radiation-based X-rays on ceria nanocrystal catalysts of particle sizes 4.4–10.6 nm. The generation of a large number of oxygen-vacancy defects (OVDs), and therefore an effective reduction of cations, has been found in CeO₂ catalytic materials bombarded by high-intensity synchrotron X-ray beams of beam size 1.5 mm × 0.5 mm, photon energies of 5.5–7.8 keV and photon fluxes up to 1.53 × 10¹² photons s⁻¹. The experimentally observed cation reduction was theoretically explained by a first-principles formation-energy calculation for oxygen vacancy defects. The results clearly indicate that OVD formation is mainly a result of X-ray-excited core holes that give rise to valence holes through electron down conversion in the material. Thermal annealing and subvalent Y-doping were also employed to modulate the efficiency of oxygen escape, providing extra control on the X-ray-induced OVD generating process. Both the core-hole-dominated bond breaking and oxygen escape mechanisms play pivotal roles for efficient OVD formation. This X-ray irradiation approach, as an alternative defect engineering method, can be applied to a wide variety of nanostructured materials for physical-property modification.

Sinusoidal wave type distortions of La_0.5Sr_1.5MnO₄in the low-temperature orthorhombic phase were observed using multi-beam resonant X-ray diffraction (MRXD) with (7/4 7/4 0) fractional primary diffraction. Two four-beam diffractions with opposite asymmetry were measured at 6.5545 keV and compared with the curves simulated by the dynamical X-ray diffraction theory. This approach provides the possibility of resolving the distortion modes which are perpendicular to the momentum transfer by a single azimuthal scan. The paper also demonstrates the sensitivity of MRXD profilesversusincident X-ray energy in the vicinity of the MnKedge to the charge disproportion between the two manganese sites, reconfirming the small charge disproportion feature.

An X-ray interference-monochromator combining a Fabry-Perot resonator (FPR) and a double-crystal monochromator (DCM) is proposed and realized for obtaining single-mode X-rays with 3.45 meV energy resolution. The monochromator is based on the generation of cavity interference fringes from a FPR and single-mode selection of the transmission spectrum by a DCM of a nearly backward symmetric reflection geometry. The energy of the monochromator can be tuned within 2500 meV(= ΔE) by temperature control of the FPR and the DCM crystals in the range of ΔT = 70 K at room temperature. The diffraction geometry and small size of the optical components used make the interference-monochromator very easy to be adapted in modern synchrotron beamlines and X-ray optics applications.

The open question of crystal symmetry for YBaCuFeO₅, still under debate, is resolved by using diffraction anomalous fine structure and resonant multi-beam X-ray diffraction at the Fe and Cu K edges. The different asymmetric intensity distributions observed at 7, 7.1305 and 8.9945 keV give direct evidence that the space group of YBaCuFeO₅ should be P4/mmm with the distance between Cu and apical O atoms longer than that between Fe and O atoms. This approach provides a direct way to resolve detailed structural symmetry which is indeterminate in conventional Bragg diffraction.

Detailed considerations of how to construct inclined-incidence hard X-ray resonators are presented. Owing to the symmetry of the crystals used, the Bragg back reflection usually employed in normal-incidence two- and multi-plate resonators to reflect the X-ray beam is often accompanied by unavoidable multiple-beam diffraction, and thus the reflectivity and cavity finesse are quite low. In contrast, crystal-based Fabry–Perot (FP) resonators at inclined incidence utilize multiple-beam diffraction to excite the back reflection inside the resonator to generate FP resonance with high efficiency, while avoiding the incident beam suffering from crystal absorption. The useful characteristics of inclined-incidence resonators are derived from numerical calculations based on the inclined-incidence diffraction geometry and the dynamical theory. Experimental results with Laue inclined incidence are in accordance with the simulation. The sub-millielectronvolt energy resolution and ultra-high efficiency of the transmission spectrum of the proposed resonators are also described.

A method for the simultaneous determination of nine strain coefficients, both shear and tensile, of crystalline bilayers is proposed and realized. The X-ray diffraction peak intensities along 2θ (vertical) and β (horizontal) scans relative to the plane of incidence of three Bragg reflections whose atomic planes are not parallel to each other can be used to obtain shear and tensile strain coefficients. The theoretical considerations and experimental examples for single-crystal GeSi/Si overlayers are reported. It is also demonstrated that, for GeSi/Si, the shear and tensile strain coefficients of the Si substrate tend to vanish when the GeSi layer is thicker than 40 nm.

Interfacial strains are important factors affecting the structural and physical properties of crystalline multilayers and heterojunctions, and the performance of the devices made of multilayers used, for example, in nanowires, optoelectronic components, and many other applications. Currently existing strain measurement methods, such as grazing incidence X-ray diffraction (GIXD), cross-section transmission electron microscope, TEM, and coherent diffractive imaging, CDI, are limited by either the nanometer spatial resolution, penetration depth, or a destructive nature. Here we report a new non-destructive method of direct mapping the interfacial strain of [001] Si_0.7Ge_0.3/Si along the depth up to ~287 nm below the interface using three-beam Bragg-surface X-ray diffraction (BSD), where one wide-angle symmetric Bragg reflection and a surface reflection are simultaneously involved. Our method combining with the dynamical diffraction theory simulation can uniquely provide unit cell dimensions layer by layer, and is applicable to thicker samples.

Hard X-ray Fabry–Perot resonators (FPRs) made from sapphire crystals were constructed and characterized. The FPRs consisted of two crystal plates, part of a monolithic crystal structure of Al₂O₃, acting as a pair of mirrors, for the backward reflection (0 0 0 30) of hard X-rays at 14.3147 keV. The dimensional accuracy during manufacturing and the defect density in the crystal in relation to the resonance efficiency of sapphire FPRs were analyzed from a theoretical standpoint based on X-ray cavity resonance and measurements using scanning electron microscopic and X-ray topographic techniques for crystal defects. Well defined resonance spectra of sapphire FPRs were successfully obtained, and were comparable with the theoretical predictions.