Mihir K. Bhaskar

Many quantum networking applications require efficient photonic interfaces to quantum memories which can be produced at scale and with high yield. Synthetic diamond offers unique potential for the implementation of this technology as it hosts color centers which retain coherent optical interfaces and long spin coherence times in nanophotonic structures. Here, we report a technique enabling wafer-scale processing of thin-film diamond that combines ion implantation and membrane liftoff, high-quality overgrowth, targeted color center implantation, and serial, high-throughput thermocompression bonding with yields approaching unity. The deterministic deposition of thin diamond membranes onto semiconductor substrates facilitates consistent integration of photonic crystal cavities with silicon-vacancy (SiV) quantum memories. We demonstrate reliable, strong coupling of SiVs to photons with cooperativities approaching 50. Furthermore, we show that photonic crystal cavities can be reliably fabricated across several membranes bonded to the same handling chip. Our platform enables modular fabrication where the photonic layer can be integrated with functionalized substrates featuring electronic control lines such as coplanar waveguides for microwave delivery. Finally, we implement passive optical packaging with sub-decibel insertion loss. Together, these advances pave the way to the scalable assembly of optically addressable quantum memory arrays which are a key building block for modular photonic quantum interconnects.

Distributing quantum information between remote systems will necessitate the integration of emerging quantum components with existing communication infrastructure. This requires understanding the channel-induced degradations of the transmitted quantum signals, beyond the typical characterization methods for classical communication systems. Here we report on a comprehensive characterization of a Boston-Area Quantum Network (BARQNET) telecom fiber testbed, measuring the time-of-flight, polarization, and phase noise imparted on transmitted signals. We further design and demonstrate a compensation system that is both resilient to these noise sources and compatible with integration of emerging quantum memory components on the deployed link. These results have utility for future work on the BARQNET as well as other quantum network testbeds in development, enabling near-term quantum networking demonstrations and informing what areas of technology development will be most impactful in advancing future system capabilities.

Color centers have emerged as a leading qubit candidate for realizing hybrid spin-photon quantum information technology. One major limitation of the platform, however, is that the characteristics of individual color centers are often strain dependent. As an illustrative case, the silicon-vacancy center in diamond typically requires millikelvin temperatures in order to achieve long coherence properties, but strained silicon-vacancy centers have been shown to operate at temperatures beyond 1 K without phonon-mediated decoherence. In this work, we combine high-stress silicon-nitride thin films with diamond nanostructures to reproducibly create statically strained silicon-vacancy color centers (mean ground state splitting of 608 GHz) with strain magnitudes of ∼4×10−4. Based on modeling, this strain should be sufficient to allow for operation of a majority silicon-vacancy centers within the measured sample at elevated temperatures (1.5 K) without any degradation of their spin properties. This method offers a scalable approach to fabricate high-temperature operation quantum memories. Beyond silicon-vacancy centers, this method is sufficiently general that it can be easily extended to other platforms as well.

Robust, low-loss photonic packaging of on-chip nanophotonic circuits is a key enabling technology for the deployment of integrated photonics in a variety of classical and quantum technologies including optical communications and quantum communications, sensing, and transduction. To date, no process has been established that enables permanent, broadband, and cryogenically compatible coupling with sub-dB losses from optical fibers to nanophotonic circuits. Here, we report a technique for reproducibly generating a permanently packaged interface between a tapered optical fiber and nanophotonic devices on diamond with a record-low coupling loss <1 dB per facet at near-infrared wavelengths (∼730 nm) that remains stable from 300 K to 30 mK. We further demonstrate the compatibility of this technique with etched lithium niobate on insulator waveguides. The technique lifts performance limitations imposed by scattering as light transfers between photonic devices and optical fibers, paving the way for scalable integration of photonic technologies at both room and cryogenic temperatures.

Long-distance quantum communication and networking require quantum memory nodes with efficient optical interfaces and long memory times. We report the realization of an integrated two-qubit network node based on silicon-vacancy centers (SiVs) in diamond nanophotonic cavities. Our qubit register consists of the SiV electron spin acting as a communication qubit and the strongly coupled silicon-29 nuclear spin acting as a memory qubit with a quantum memory time exceeding 2 seconds. By using a highly strained SiV, we realize electron-photon entangling gates at temperatures up to 1.5 kelvin and nucleus-photon entangling gates up to 4.3 kelvin. We also demonstrate efficient error detection in nuclear spin–photon gates by using the electron spin as a flag qubit, making this platform a promising candidate for scalable quantum repeaters.

Solid-state quantum emitters are promising candidates for the realization of quantum networks, owing to their long-lived spin memories, high-fidelity local operations, and optical connectivity for long-range entanglement. However, due to differences in local environment, solid-state emitters typically feature a range of distinct transition frequencies, which makes it challenging to create optically mediated entanglement between arbitrary emitter pairs. We propose and demonstrate an efficient method for entangling emitters with optical transitions separated by many linewidths. In our approach, electro-optic modulators enable a single photon to herald a parity measurement on a pair of spin qubits. We experimentally demonstrate the protocol using two silicon-vacancy centers in a diamond nanophotonic cavity, with optical transitions separated by 7.4 GHz. Working with distinguishable emitters allows for individual qubit addressing and readout, enabling parallel control and entanglement of both colocated and spatially separated emitters, a key step toward scaling up quantum information processing systems.

The ability to communicate quantum information over long distances is of central importance in quantum science and engineering¹. Although some applications of quantum communication such as secure quantum key distribution^2,3 are already being successfully deployed^4,5,6,7, their range is currently limited by photon losses and cannot be extended using straightforward measure-and-repeat strategies without compromising unconditional security⁸. Alternatively, quantum repeaters⁹, which utilize intermediate quantum memory nodes and error correction techniques, can extend the range of quantum channels. However, their implementation remains an outstanding challenge^{10,11,12,13,14,15,16}, requiring a combination of efficient and high-fidelity quantum memories, gate operations, and measurements. Here we use a single solid-state spin memory integrated in a nanophotonic diamond resonator^17,18,19 to implement asynchronous photonic Bell-state measurements, which are a key component of quantum repeaters. In a proof-of-principle experiment, we demonstrate high-fidelity operation that effectively enables quantum communication at a rate that surpasses the ideal loss-equivalent direct-transmission method while operating at megahertz clock speeds. These results represent a crucial step towards practical quantum repeaters and large-scale quantum networks^20,21.

We realize an elementary quantum network node consisting of a silicon-vacancy (SiV) color center inside a diamond nanocavity coupled to a nearby nuclear spin with 100-ms-long coherence times. Specifically, we describe experimental techniques and discuss effects of strain, magnetic field, microwave driving, and spin bath on the properties of this two-qubit register. We then employ these techniques to generate Bell states between the SiV spin and an incident photon as well as between the SiV spin and a nearby nuclear spin. We also discuss control techniques and parameter regimes for utilizing the SiV-nanocavity system as an integrated quantum network node.