Alberto Tagliaferri
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Research Interests
Alberto Tagliaferri has a total of 281 co-authors. Here are the top co-authors by number of shared publications:
- Nb Brookes
ESRF, The European Synchrotron, Grenoble, France
44 shared publications - Giacomo Ghiringhelli
Dipartimento di Fisica, Politecnico di Milano, Milano, Italy
36 shared publications - Lucio Braicovich
Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano, Italy
35 shared publications C. Dallera
Dipartimento di Fisica, CNR/INFM ULTRAS, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano, Italy
14 shared publications- Maurizio Zani
Politecnico di Milano
13 shared publications - Monica Bollani
Institute of Photonics and Nanotechnology (IFN)—CNR, P.zza Leonardo da Vinci 32, 20133 Milano, Italy
10 shared publications
Latest Publications
- 28 April 2026
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 139 (16)
Magnetic properties of Ni80Fe20 films exposed to HF for integration in MEMS devices
One of the greatest challenges in the monolithic integration of micro-magnets in Si-based microelectromechanical systems (MEMS) is the release of suspended structures through exposure to hydrofluoric acid. Ni80Fe20 (Py) has been mainly used in prototypes of these hybrid devices, essentially because of its high resistance to exposure to hydrofluoric acid (HF). However, a detailed investigation of the physical mechanisms leading to its resistance to corrosion, as well as a characterization of the impact of HF exposure on the magnetic properties of Py, is still missing. Here, we present a combined surface science and magnetic investigation of Py films exposed to HF vapors in the typical conditions of MEMS release. X-ray photoemission spectroscopy and scanning Auger microscopy measurements show the tendency of Py to self-passivation by the creation of a surface fluoride layer (a few nm thick), accompanied by the formation of blisters with diameter on the order of 10–20 μm. A decrease in the average static magnetization is observed by vibrating sample magnetometry upon HF exposure, compatible with the creation of an interfacial fluoride capping behaving as a magnetic dead layer. A slight increase in the Gilbert damping (from 0.0079 to 0.0095) is found by vector network analyzer-ferromagnetic resonance, which could be compatible with blistering. Overall, this analysis confirms that Py displays excellent intrinsic resistance to HF so that it can be effectively used for integration of thick magnetic elements in MEMS without protective layers. For thin films to be used in spintronic/magnonic devices, instead, an additional capping layer should be used to fully preserve dynamic magnetic properties.
- 28 April 2026
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 139 (16)
Magnetic properties of Ni80Fe20 films exposed to HF for integration in MEMS devices
One of the greatest challenges in the monolithic integration of micro-magnets in Si-based microelectromechanical systems (MEMS) is the release of suspended structures through exposure to hydrofluoric acid. Ni80Fe20 (Py) has been mainly used in prototypes of these hybrid devices, essentially because of its high resistance to exposure to hydrofluoric acid (HF). However, a detailed investigation of the physical mechanisms leading to its resistance to corrosion, as well as a characterization of the impact of HF exposure on the magnetic properties of Py, is still missing. Here, we present a combined surface science and magnetic investigation of Py films exposed to HF vapors in the typical conditions of MEMS release. X-ray photoemission spectroscopy and scanning Auger microscopy measurements show the tendency of Py to self-passivation by the creation of a surface fluoride layer (a few nm thick), accompanied by the formation of blisters with diameter on the order of 10–20 μm. A decrease in the average static magnetization is observed by vibrating sample magnetometry upon HF exposure, compatible with the creation of an interfacial fluoride capping behaving as a magnetic dead layer. A slight increase in the Gilbert damping (from 0.0079 to 0.0095) is found by vector network analyzer-ferromagnetic resonance, which could be compatible with blistering. Overall, this analysis confirms that Py displays excellent intrinsic resistance to HF so that it can be effectively used for integration of thick magnetic elements in MEMS without protective layers. For thin films to be used in spintronic/magnonic devices, instead, an additional capping layer should be used to fully preserve dynamic magnetic properties.
- Open Access
- 24 June 2021
- Published by MDPI AG in Applied Sciences
- Vol. 11 (13) , 5892
High Repetition Rate and Coherent Free-Electron Laser Oscillator in the Tender X-ray Range Tailored for Linear Spectroscopy
Fine time-resolved analysis of matter—that is, spectroscopy and photon scattering—in the linear response regime requires fs-scale pulsed, high repetition rate, fully coherent X-ray sources. A seeded Free-Electron Laser, driven by a linac based on Super Conducting cavities, generating – coherent photons at 2–5 keV with 0.2–1 MHz of repetition rate, can address this need. The scheme proposed is a Free-Electron Laser Oscillator at 3 keV, working with a cavity based on X-ray mirrors. The whole chain of the X-ray generation is here described by means of start-to-end simulations.- 24 June 2021
- Published by MDPI AG in Applied Sciences
- Vol. 11 (13) , 5892
Open AccessHigh Repetition Rate and Coherent Free-Electron Laser Oscillator in the Tender X-ray Range Tailored for Linear Spectroscopy
Fine time-resolved analysis of matter—that is, spectroscopy and photon scattering—in the linear response regime requires fs-scale pulsed, high repetition rate, fully coherent X-ray sources. A seeded Free-Electron Laser, driven by a linac based on Super Conducting cavities, generating – coherent photons at 2–5 keV with 0.2–1 MHz of repetition rate, can address this need. The scheme proposed is a Free-Electron Laser Oscillator at 3 keV, working with a cavity based on X-ray mirrors. The whole chain of the X-ray generation is here described by means of start-to-end simulations. - Open Access
- 9 September 2019
- Published by MDPI AG in Instruments
- Vol. 3 (3) , 47
High Repetition Rate and Coherent Free-Electron Laser in the X-Rays Range Tailored for Linear Spectroscopy
Fine time-resolved analysis of matter—i.e., spectroscopy and photon scattering—in the linear response regime requires fs-scale pulsed, high repetition rate, fully coherent X-ray sources. A seeded Free Electron Laser (FEL) driven by a Linac based on Super Conducting cavities, generating – coherent photons at 2–5 keV with 0.2–1 MHz of repetition rate, can address this need. Three different seeding schemes, reaching the X-ray range, are described hereafter. The first two are multi-stage cascades upshifting the radiation frequency by a factor of 10–30 starting from a seed represented by a coherent flash of extreme ultraviolet light. This radiation can be provided either by the High Harmonic Generation of an optical laser or by an FEL Oscillator operating at 12–14 nm. The third scheme is a regenerative amplifier working with X-ray mirrors. The whole chain of the X-ray generation is here described by means of start-to-end simulations.- 9 September 2019
- Published by MDPI AG in Instruments
- Vol. 3 (3) , 47
Open AccessHigh Repetition Rate and Coherent Free-Electron Laser in the X-Rays Range Tailored for Linear Spectroscopy
Fine time-resolved analysis of matter—i.e., spectroscopy and photon scattering—in the linear response regime requires fs-scale pulsed, high repetition rate, fully coherent X-ray sources. A seeded Free Electron Laser (FEL) driven by a Linac based on Super Conducting cavities, generating – coherent photons at 2–5 keV with 0.2–1 MHz of repetition rate, can address this need. Three different seeding schemes, reaching the X-ray range, are described hereafter. The first two are multi-stage cascades upshifting the radiation frequency by a factor of 10–30 starting from a seed represented by a coherent flash of extreme ultraviolet light. This radiation can be provided either by the High Harmonic Generation of an optical laser or by an FEL Oscillator operating at 12–14 nm. The third scheme is a regenerative amplifier working with X-ray mirrors. The whole chain of the X-ray generation is here described by means of start-to-end simulations. - 1 April 2018
- Published by Elsevier in Ultramicroscopy
- Vol. 187, 93-97
Charge dynamics in aluminum oxide thin film studied by ultrafast scanning electron microscopy
- 1 April 2018
- Published by Elsevier in Ultramicroscopy
- Vol. 187, 93-97
Charge dynamics in aluminum oxide thin film studied by ultrafast scanning electron microscopy
- 18 May 2017
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry A
- Vol. 5 (25) , 12977-12989
Enhanced photopromoted electron transfer over a bilayer WO3 n–n heterojunction prepared by RF diode sputtering
A bilayer WO3 photoelectrode was obtained by radio frequency (RF) plasma sputtering in a reactive 40%O2/Ar atmosphere by depositing two successive WO3 coatings on a tungsten foil at two different total gas pressures (3 Pa and 1.7 Pa, respectively), followed by calcination at 600 °C. Two monolayer samples deposited at each of the two pressures and a bilayer sample deposited at inverted pressures were also prepared. Their photoelectrocatalytic (PEC) activity was evaluated by both Incident Photon-to-Current Efficiency (IPCE) measurements and separate evolution of H2 and O2 by water splitting in a two-compartment PEC cell. SEM analysis revealed that the photoanodes have a nanostructured porous double layer surmounting a columnar basement (Staffa-like morphology, after the name of the Scottish island). Mott–Schottky analysis showed that the single layer deposited at 3 Pa has a conduction flat band potential 0.1 V more positive than that deposited at 1.7 Pa. The equivalent n–n heterojunction at the interface of the double-layer creates a built-in electric field that facilitates the photopromoted electron transfer toward the lower lying conduction band material, while the columnar innermost layer introduces percolation paths for efficient electron transport toward the conductive tungsten foil. Both phenomena contribute to decrease the interfacial charge transfer resistance (Rct) and lead up to a ca. 30% increase in the PEC performance compared to the monolayer and the inverted bilayer coatings and to a 93% faradaic efficiency, which is among the highest reported so far for WO3 photoanodes. Upon methanol addition an outstanding 4-fold photocurrent density increase up to 6.3 mA cm−2 was attained over the bilayer WO3 photoanode, much larger than the usually observed current doubling effect.
- 18 May 2017
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry A
- Vol. 5 (25) , 12977-12989
Enhanced photopromoted electron transfer over a bilayer WO3 n–n heterojunction prepared by RF diode sputtering
A bilayer WO3 photoelectrode was obtained by radio frequency (RF) plasma sputtering in a reactive 40%O2/Ar atmosphere by depositing two successive WO3 coatings on a tungsten foil at two different total gas pressures (3 Pa and 1.7 Pa, respectively), followed by calcination at 600 °C. Two monolayer samples deposited at each of the two pressures and a bilayer sample deposited at inverted pressures were also prepared. Their photoelectrocatalytic (PEC) activity was evaluated by both Incident Photon-to-Current Efficiency (IPCE) measurements and separate evolution of H2 and O2 by water splitting in a two-compartment PEC cell. SEM analysis revealed that the photoanodes have a nanostructured porous double layer surmounting a columnar basement (Staffa-like morphology, after the name of the Scottish island). Mott–Schottky analysis showed that the single layer deposited at 3 Pa has a conduction flat band potential 0.1 V more positive than that deposited at 1.7 Pa. The equivalent n–n heterojunction at the interface of the double-layer creates a built-in electric field that facilitates the photopromoted electron transfer toward the lower lying conduction band material, while the columnar innermost layer introduces percolation paths for efficient electron transport toward the conductive tungsten foil. Both phenomena contribute to decrease the interfacial charge transfer resistance (Rct) and lead up to a ca. 30% increase in the PEC performance compared to the monolayer and the inverted bilayer coatings and to a 93% faradaic efficiency, which is among the highest reported so far for WO3 photoanodes. Upon methanol addition an outstanding 4-fold photocurrent density increase up to 6.3 mA cm−2 was attained over the bilayer WO3 photoanode, much larger than the usually observed current doubling effect.
- 1 October 2016
- Published by Elsevier in Thin Solid Films
- Vol. 616, 375-380
Tungsten oxide thin film photo-anodes by reactive RF diode sputtering
- 1 October 2016
- Published by Elsevier in Thin Solid Films
- Vol. 616, 375-380
Tungsten oxide thin film photo-anodes by reactive RF diode sputtering
- 1 July 2016
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1-4
Advanced spectroscopies of graphene and 2D materials
A full exploitation of the unique features of graphene and related 2D materials in micro and nano-scaled optoelectronic devices for high-data rate photonic systems calls for a deep understanding of their fundamental structural, electronic, photophysical properties and fast dynamics. We introduce some advanced spectroscopic techniques developed to this aim, while reviewing their specific potentialities and highlighting recent results. To provide absolute local nanoscale thickness metrology of as-grown 2D materials, Scanning Auger Electron Microspectroscopy has been calibrated. Results obtained for graphene and graphene oxide (GO) are reported, showing sub-monolayer resolution. Ultrafast optical transient absorption spectroscopy, with temporal resolution down to 10fs, unveils the relaxation dynamics of hot electrons in single layer graphene and the formation and radiative recombination via stimulated emission of biexcitons in ultra-narrow, structurally well-defined nanoribbons (GNRs). By recently developed ultrafast Time- and Angle-resolved Photo-Electron Spectroscopy (TR-ARPES) we investigate electronic states and spin dynamics close to the Dirac cone, in graphene and metal chalcogenide topological insulators (TI) under fs strong laser excitation, in view of spintronic applications.
- 1 July 2016
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1-4
Advanced spectroscopies of graphene and 2D materials
A full exploitation of the unique features of graphene and related 2D materials in micro and nano-scaled optoelectronic devices for high-data rate photonic systems calls for a deep understanding of their fundamental structural, electronic, photophysical properties and fast dynamics. We introduce some advanced spectroscopic techniques developed to this aim, while reviewing their specific potentialities and highlighting recent results. To provide absolute local nanoscale thickness metrology of as-grown 2D materials, Scanning Auger Electron Microspectroscopy has been calibrated. Results obtained for graphene and graphene oxide (GO) are reported, showing sub-monolayer resolution. Ultrafast optical transient absorption spectroscopy, with temporal resolution down to 10fs, unveils the relaxation dynamics of hot electrons in single layer graphene and the formation and radiative recombination via stimulated emission of biexcitons in ultra-narrow, structurally well-defined nanoribbons (GNRs). By recently developed ultrafast Time- and Angle-resolved Photo-Electron Spectroscopy (TR-ARPES) we investigate electronic states and spin dynamics close to the Dirac cone, in graphene and metal chalcogenide topological insulators (TI) under fs strong laser excitation, in view of spintronic applications.
- 1 March 2016
- Published by Elsevier in Thin Solid Films
- Vol. 603, 173-179
Black-silicon production process by CF4/H2 plasma
- 1 March 2016
- Published by Elsevier in Thin Solid Films
- Vol. 603, 173-179
Black-silicon production process by CF4/H2 plasma
- 16 October 2015
- Published by Taylor & Francis
- p. 413-432
Tip-Enhanced Raman Spectroscopy: Applications to Carbon Nanomaterials
- 16 October 2015
- Published by Taylor & Francis
- p. 413-432
Tip-Enhanced Raman Spectroscopy: Applications to Carbon Nanomaterials