Sanggwon Lee
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
Sanggwon Lee has a total of 22 co-authors. Here are the top co-authors by number of shared publications:
- Keita Yasutomi
Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan
2 shared publications - Masato Morita
Graduate School of Science and Technology, Shizuoka University, Hamamatsu, Shizuoka 432-8011, Japan
2 shared publications - Shoji Kawahito
Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan
2 shared publications - Byoung-Soo Choi
School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea
1 shared publication Chaeun Park
Laboratory of Medicinal Chemistry, College of Pharmacy, Pusan National University, Busan 46241, South Korea
1 shared publicationDong-Hwan Jin
Korea Advanced Institute of Science and Technology, Daejeon, Republic of Korea
1 shared publication
Latest Publications
- Open Access
A Time-of-Flight Range Sensor Using Four-Tap Lock-In Pixels with High near Infrared Sensitivity for LiDAR Applications
In this paper, a back-illuminated (BSI) time-of-flight (TOF) sensor using 0.2 µm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology is developed for long-range laser imaging detection and ranging (LiDAR) application. A 200 µm-thick bulk silicon in the SOI substrate is fully depleted by applying high negative voltage at the backside for higher quantum efficiency (QE) in a near-infrared (NIR) region. The proposed SOI-based four-tap charge modulator achieves a high-speed charge modulation and high modulation contrast of 71% in a NIR region. In addition, in-pixel drain function is used for short-pulse TOF measurements. A distance measurement up to 27 m is carried out with +1.8~−3.0% linearity error and range resolution of 4.5 cm in outdoor conditions. The measured QE of 55% is attained at 940 nm which is suitable for outdoor use due to the reduced spectral components of solar radiation.
Open AccessA Time-of-Flight Range Sensor Using Four-Tap Lock-In Pixels with High near Infrared Sensitivity for LiDAR Applications
In this paper, a back-illuminated (BSI) time-of-flight (TOF) sensor using 0.2 µm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology is developed for long-range laser imaging detection and ranging (LiDAR) application. A 200 µm-thick bulk silicon in the SOI substrate is fully depleted by applying high negative voltage at the backside for higher quantum efficiency (QE) in a near-infrared (NIR) region. The proposed SOI-based four-tap charge modulator achieves a high-speed charge modulation and high modulation contrast of 71% in a NIR region. In addition, in-pixel drain function is used for short-pulse TOF measurements. A distance measurement up to 27 m is carried out with +1.8~−3.0% linearity error and range resolution of 4.5 cm in outdoor conditions. The measured QE of 55% is attained at 940 nm which is suitable for outdoor use due to the reduced spectral components of solar radiation.
- 1 September 2019
- Published by Elsevier in Bioorganic & Medicinal Chemistry
- Vol. 27 (17) , 3929-3937
Inhibitory effects of N-(acryloyl)benzamide derivatives on tyrosinase and melanogenesis
- 1 September 2019
- Published by Elsevier in Bioorganic & Medicinal Chemistry
- Vol. 27 (17) , 3929-3937
Inhibitory effects of N-(acryloyl)benzamide derivatives on tyrosinase and melanogenesis
- Open Access
- 22 November 2018
- Published by MDPI AG in Proceedings
- Vol. 2 (13) , 798
A Back-Illuminated Time-of-Flight Image Sensor with SOI-Based Fully Depleted Detector Technology for LiDAR Application
A back-illuminated time-of-flight (ToF) image sensor based on a 0.2 µm silicon-on-insulator (SOI) CMOS detector technology using fully-depleted substrate is developed for the light detection and ranging (LiDAR) applications. A fully-depleted 200 µm-thick bulk silicon is used for the higher quantum efficiency (QE) in a near-infrared (NIR) region. The developed SOI pixel structure has a 4-tapped charge modulator with a draining function to achieve a higher range resolution and to cancel background light signal. A distance is measured up to 27 m with a range resolution of 12 cm at the outdoor and average light power density is 150 mW/m2@30 m.
- 22 November 2018
- Published by MDPI AG in Proceedings
- Vol. 2 (13) , 798
Open AccessA Back-Illuminated Time-of-Flight Image Sensor with SOI-Based Fully Depleted Detector Technology for LiDAR Application
A back-illuminated time-of-flight (ToF) image sensor based on a 0.2 µm silicon-on-insulator (SOI) CMOS detector technology using fully-depleted substrate is developed for the light detection and ranging (LiDAR) applications. A fully-depleted 200 µm-thick bulk silicon is used for the higher quantum efficiency (QE) in a near-infrared (NIR) region. The developed SOI pixel structure has a 4-tapped charge modulator with a draining function to achieve a higher range resolution and to cancel background light signal. A distance is measured up to 27 m with a range resolution of 12 cm at the outdoor and average light power density is 150 mW/m2@30 m.
- 1 November 2015
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1-4
Delta readout scheme for image-dependent power savings in a CMOS image sensor with multi-column-parallel SAR ADCs
A power-saving readout scheme for CMOS image sensors (CIS) that utilizes the image properties is presented. The proposed delta-readout (Δ-readout) scheme reads the signal difference between two pixels located next to each other. By effectively reducing the dynamic range of the signal, the readout ADC can reduce the number of decision cycles and save power consumption while maintaining the ADC performance at the level of a conventional ADC. The prototype QQVGA CIS with ten 10-bit SAR ADCs in a multi-column-parallel (MCP) configuration was fabricated in a 1P4M 0.18 μm CIS process with metal-insulator-metal (MIM) capacitors. The measurement results show the power-saving effect of 26% depending on the image patterns.
- 1 November 2015
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1-4
Delta readout scheme for image-dependent power savings in a CMOS image sensor with multi-column-parallel SAR ADCs
A power-saving readout scheme for CMOS image sensors (CIS) that utilizes the image properties is presented. The proposed delta-readout (Δ-readout) scheme reads the signal difference between two pixels located next to each other. By effectively reducing the dynamic range of the signal, the readout ADC can reduce the number of decision cycles and save power consumption while maintaining the ADC performance at the level of a conventional ADC. The prototype QQVGA CIS with ten 10-bit SAR ADCs in a multi-column-parallel (MCP) configuration was fabricated in a 1P4M 0.18 μm CIS process with metal-insulator-metal (MIM) capacitors. The measurement results show the power-saving effect of 26% depending on the image patterns.