Ho Hai Nam
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Ho Hai Nam has a total of 4 co-authors. Here are the top co-authors by number of shared publications:
- Keita Yasutomi
Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan
1 shared publication - Masato Morita
Graduate School of Science and Technology, Shizuoka University, Hamamatsu, Shizuoka 432-8011, Japan
1 shared publication - Sanggwon Lee
Graduate School of Science and Technology, Shizuoka University, Hamamatsu, Shizuoka 432-8011, Japan
1 shared publication - Shoji Kawahito
Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan
1 shared publication
Latest Publications
- Open Access
- 22 November 2018
- Published by MDPI AG in Proceedings
- Vol. 2 (13) , 798
A Back-Illuminated Time-of-Flight Image Sensor with SOI-Based Fully Depleted Detector Technology for LiDAR Application
A back-illuminated time-of-flight (ToF) image sensor based on a 0.2 µm silicon-on-insulator (SOI) CMOS detector technology using fully-depleted substrate is developed for the light detection and ranging (LiDAR) applications. A fully-depleted 200 µm-thick bulk silicon is used for the higher quantum efficiency (QE) in a near-infrared (NIR) region. The developed SOI pixel structure has a 4-tapped charge modulator with a draining function to achieve a higher range resolution and to cancel background light signal. A distance is measured up to 27 m with a range resolution of 12 cm at the outdoor and average light power density is 150 mW/m2@30 m.
- 22 November 2018
- Published by MDPI AG in Proceedings
- Vol. 2 (13) , 798
Open AccessA Back-Illuminated Time-of-Flight Image Sensor with SOI-Based Fully Depleted Detector Technology for LiDAR Application
A back-illuminated time-of-flight (ToF) image sensor based on a 0.2 µm silicon-on-insulator (SOI) CMOS detector technology using fully-depleted substrate is developed for the light detection and ranging (LiDAR) applications. A fully-depleted 200 µm-thick bulk silicon is used for the higher quantum efficiency (QE) in a near-infrared (NIR) region. The developed SOI pixel structure has a 4-tapped charge modulator with a draining function to achieve a higher range resolution and to cancel background light signal. A distance is measured up to 27 m with a range resolution of 12 cm at the outdoor and average light power density is 150 mW/m2@30 m.