Amard Afzalian
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Amard Afzalian has a total of 2 co-authors. Here are the top co-authors by number of shared publications:
- Hossein Miar-Naimi
Department of Electrical and Electronic Engineering, Babol Noshirvani University of Technology, Babol, Iran
2 shared publications - Massoud Dousti
Department of Electrical and Computer Engineering, Science and Research Branch, Islamic Azad University, Tehran, Iran
2 shared publications
Latest Publications
- 19 August 2019
- Published by Wiley in International Journal of Circuit Theory and Applications
- Vol. 48 (1) , 84-102
Analysis of power‐frequency trade‐offs in millimeter‐wave CMOS oscillators
Summary: In this paper, considering the nonlinear effects in two ports consisting of transistor, a general method is proposed for estimating the amplitude of high‐frequency ring oscillators. The proposed method can be generalized to various structures that can be disassembled into similar two ports. Moreover, in each CMOS process, a design procedure can be followed to obtain the desired output power and frequency. This is the first time that the frequency and amplitude of oscillator are related to each other in a system of nonlinear equations. First, considering the maximum achievable oscillation frequency, the analysis of ring oscillator structure is performed for the given output power. The results show that the proposed structure operates at 7 to 18% higher oscillation frequency compared with conventional structures. In the next step, assuming that the oscillator structure and passive network topology are known, another system of nonlinear equations is defined for designing the oscillator for the given frequency and amplitude of oscillation. Finally, the implicit solution, which includes the passive network elements connecting to the transistor, is obtained. The results of equations follow the simulation results with an acceptable error (1% frequency error and about 5% amplitude error).
- 19 August 2019
- Published by Wiley in International Journal of Circuit Theory and Applications
- Vol. 48 (1) , 84-102
Analysis of power‐frequency trade‐offs in millimeter‐wave CMOS oscillators
Summary: In this paper, considering the nonlinear effects in two ports consisting of transistor, a general method is proposed for estimating the amplitude of high‐frequency ring oscillators. The proposed method can be generalized to various structures that can be disassembled into similar two ports. Moreover, in each CMOS process, a design procedure can be followed to obtain the desired output power and frequency. This is the first time that the frequency and amplitude of oscillator are related to each other in a system of nonlinear equations. First, considering the maximum achievable oscillation frequency, the analysis of ring oscillator structure is performed for the given output power. The results show that the proposed structure operates at 7 to 18% higher oscillation frequency compared with conventional structures. In the next step, assuming that the oscillator structure and passive network topology are known, another system of nonlinear equations is defined for designing the oscillator for the given frequency and amplitude of oscillation. Finally, the implicit solution, which includes the passive network elements connecting to the transistor, is obtained. The results of equations follow the simulation results with an acceptable error (1% frequency error and about 5% amplitude error).
- 5 December 2018
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Very Large Scale Integration (VLSI) Systems
- Vol. 27 (3) , 587-600
What Is the Maximum Achievable Oscillation Frequency in a Specified CMOS Process?
- 5 December 2018
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Very Large Scale Integration (VLSI) Systems
- Vol. 27 (3) , 587-600
What Is the Maximum Achievable Oscillation Frequency in a Specified CMOS Process?