Jin-Su Oh
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Jin-Su Oh has a total of 241 co-authors. Here are the top co-authors by number of shared publications:
- Lin Zhou
Department of Materials Science and Engineering University of Virginia Charlottesville Virginia USA
13 shared publications - Matthew J. Kramer
Ames National Laboratory
11 shared publications - Akshay A. Murthy
Fermi National Accelerator Laboratory
7 shared publications - Cameron J. Kopas
Rigetti Computing 3 , Berkeley, California 94710
7 shared publications Anna Grassellino
Superconducting Quantum Materials and Systems Division
5 shared publications- Cheol-Woong Yang
School of Advanced Materials Science & Engineering Sungkyunkwan University Suwon Republic of Korea
5 shared publications
Latest Publications
- 1 June 2026
- Published by AIP Publishing in Applied Physics Reviews
- Vol. 13 (2)
Identifying materials-level sources of performance variation in superconducting transmon qubits
The Superconducting Quantum Materials and Systems Center, a U. S. Department of Energy National Quantum Information Science Research Center, has conducted a comprehensive and coordinated study using superconducting transmon qubit chips with known performance metrics to identify the underlying materials-level sources of device-to-device performance variation. Following qubit coherence measurements, these qubits of varying base superconducting metals and substrates have been examined with various non-destructive and invasive material characterization techniques at Northwestern University, Ames National Laboratory, and Fermilab as part of a blind study. We find trends in variations of the depth of the etched substrate trench, the thickness of the surface oxide, and the geometry of the sidewall, which when combined, lead to correlations with the T1 lifetime across different qubits on the same chip. In addition, we provide a list of features that varied from device to device, for which the impact on performance requires further studies. Finally, we identify two low-temperature characterization techniques that may potentially serve as proxy tools for qubit measurements. These insights provide materials-oriented solutions to not only reduce performance variations across neighboring devices but also to engineer and fabricate devices with optimal geometries to achieve performance metrics beyond the state-of-the-art values.
- 1 June 2026
- Published by AIP Publishing in Applied Physics Reviews
- Vol. 13 (2)
Identifying materials-level sources of performance variation in superconducting transmon qubits
The Superconducting Quantum Materials and Systems Center, a U. S. Department of Energy National Quantum Information Science Research Center, has conducted a comprehensive and coordinated study using superconducting transmon qubit chips with known performance metrics to identify the underlying materials-level sources of device-to-device performance variation. Following qubit coherence measurements, these qubits of varying base superconducting metals and substrates have been examined with various non-destructive and invasive material characterization techniques at Northwestern University, Ames National Laboratory, and Fermilab as part of a blind study. We find trends in variations of the depth of the etched substrate trench, the thickness of the surface oxide, and the geometry of the sidewall, which when combined, lead to correlations with the T1 lifetime across different qubits on the same chip. In addition, we provide a list of features that varied from device to device, for which the impact on performance requires further studies. Finally, we identify two low-temperature characterization techniques that may potentially serve as proxy tools for qubit measurements. These insights provide materials-oriented solutions to not only reduce performance variations across neighboring devices but also to engineer and fabricate devices with optimal geometries to achieve performance metrics beyond the state-of-the-art values.
- 4 March 2026
- Published by American Chemical Society (ACS) in ACS Nano
- Vol. 20 (10) , 8726-8735
Atomic-Scale Characterization and Electronic Properties of Gold-Capped Niobium Films for Superconducting Qubits
Niobium thin films are central to superconducting qubits, but their complex native oxides contribute significantly to microwave losses. A promising mitigation strategy is to suppress oxide formation using engineered thin-film encapsulation layers. Recent experiments have shown that ∼10 nm metallic overlayers on Nb capacitor films can improve the energy relaxation time T1 of transmon qubits. Here, we present a comparative study of Au-capped Nb films fabricated in situ by molecular beam epitaxy and ex situ by sequential deposition benchmarked against bare Nb films. Using complementary structural, chemical, and spectroscopic techniques, we correlate the interface quality with superconducting electronic properties of the Au surface. Low-temperature scanning tunneling spectroscopy (STS) provides spatially resolved quasiparticle density-of-states maps. While both Au-capped Nb samples exhibit large areas with uniform, fully gapped density of states, clear differences emerge between the two interfaces. Compared to in situ Nb–Au, ex situ Nb–Au exhibits a reduced induced superconducting gap, broadened coherence peak, and localized in-gap states, consistent with a residual NbxOy layer at the interface. Supported by complementary structural and chemical analyses, these findings demonstrate that STS directly links nanoscale superconducting properties to interface preparation, highlighting the importance of controlled in situ encapsulation for minimizing dissipation and improving quantum coherence.
- 4 March 2026
- Published by American Chemical Society (ACS) in ACS Nano
- Vol. 20 (10) , 8726-8735
Atomic-Scale Characterization and Electronic Properties of Gold-Capped Niobium Films for Superconducting Qubits
Niobium thin films are central to superconducting qubits, but their complex native oxides contribute significantly to microwave losses. A promising mitigation strategy is to suppress oxide formation using engineered thin-film encapsulation layers. Recent experiments have shown that ∼10 nm metallic overlayers on Nb capacitor films can improve the energy relaxation time T1 of transmon qubits. Here, we present a comparative study of Au-capped Nb films fabricated in situ by molecular beam epitaxy and ex situ by sequential deposition benchmarked against bare Nb films. Using complementary structural, chemical, and spectroscopic techniques, we correlate the interface quality with superconducting electronic properties of the Au surface. Low-temperature scanning tunneling spectroscopy (STS) provides spatially resolved quasiparticle density-of-states maps. While both Au-capped Nb samples exhibit large areas with uniform, fully gapped density of states, clear differences emerge between the two interfaces. Compared to in situ Nb–Au, ex situ Nb–Au exhibits a reduced induced superconducting gap, broadened coherence peak, and localized in-gap states, consistent with a residual NbxOy layer at the interface. Supported by complementary structural and chemical analyses, these findings demonstrate that STS directly links nanoscale superconducting properties to interface preparation, highlighting the importance of controlled in situ encapsulation for minimizing dissipation and improving quantum coherence.
- Open Access
- 20 January 2026
- Published by Royal Society of Chemistry (RSC) in Chemical Science
- Vol. 17 (11) , 5684-5693
Temperature-driven reaction pathways in alkane direct dehydrogenation over metal-free nitrogen doped carbocatalysts
Metal-free heteroatom-doped carbocatalysts are promising alternatives to precious metals for alkane direct dehydrogenation/hydrogenation and reversible hydrogen storage, yet the nature of their active sites remains poorly understood. This study investigates a nitrogen assembly carbocatalyst (NAC) for efficient and selective hydrocarbon dehydrogenation. For ethylbenzene, NAC maintains a selectivity of >99% towards styrene at a conversion of >20% for 120 hours at a weight hourly space velocity of 0.4 h-1. Theoretical studies suggest that closely spaced graphitic nitrogen sites are the active sites for the chemisorption and dehydrogenation of ethylbenzene, and the robustness of these sites is supported by ambient-pressure X-ray photoelectron spectroscopy. Kinetic analysis reveals a temperature-dependent reaction profile, with distinct activation energies and reaction orders at 300 and 500 °C. Isotope-labeling studies indicate that dehydrogenation primarily proceeds via initial cleavage of the benzylic C-H bond, and the faster desorption of ethylbenzene at higher temperatures contributes to the difference in kinetic behavior. Importantly, the NAC catalyst also enables efficient hydrogenation of styrene back to ethylbenzene at 250 °C, allowing for reversible hydrogen storage using a single catalyst at moderate temperatures. These findings underscore the significance of constructing high densities of closely spaced graphitic nitrogen in carbocatalysts for enhanced activity and selectivity.
- 20 January 2026
- Published by Royal Society of Chemistry (RSC) in Chemical Science
- Vol. 17 (11) , 5684-5693
Open AccessTemperature-driven reaction pathways in alkane direct dehydrogenation over metal-free nitrogen doped carbocatalysts
Metal-free heteroatom-doped carbocatalysts are promising alternatives to precious metals for alkane direct dehydrogenation/hydrogenation and reversible hydrogen storage, yet the nature of their active sites remains poorly understood. This study investigates a nitrogen assembly carbocatalyst (NAC) for efficient and selective hydrocarbon dehydrogenation. For ethylbenzene, NAC maintains a selectivity of >99% towards styrene at a conversion of >20% for 120 hours at a weight hourly space velocity of 0.4 h-1. Theoretical studies suggest that closely spaced graphitic nitrogen sites are the active sites for the chemisorption and dehydrogenation of ethylbenzene, and the robustness of these sites is supported by ambient-pressure X-ray photoelectron spectroscopy. Kinetic analysis reveals a temperature-dependent reaction profile, with distinct activation energies and reaction orders at 300 and 500 °C. Isotope-labeling studies indicate that dehydrogenation primarily proceeds via initial cleavage of the benzylic C-H bond, and the faster desorption of ethylbenzene at higher temperatures contributes to the difference in kinetic behavior. Importantly, the NAC catalyst also enables efficient hydrogenation of styrene back to ethylbenzene at 250 °C, allowing for reversible hydrogen storage using a single catalyst at moderate temperatures. These findings underscore the significance of constructing high densities of closely spaced graphitic nitrogen in carbocatalysts for enhanced activity and selectivity.
- 25 September 2025
- Published by American Physical Society (APS) in Physical Review Materials
- Vol. 9 (9)
Interface-sensitive microwave loss in superconducting tantalum films sputtered on c-plane sapphire
- 25 September 2025
- Published by American Physical Society (APS) in Physical Review Materials
- Vol. 9 (9)
Interface-sensitive microwave loss in superconducting tantalum films sputtered on c-plane sapphire
- 15 September 2025
- Published by AIP Publishing in Applied Physics Letters
- Vol. 127 (11)
Terahertz near-field imaging of sidewall-induced losses in superconducting qubits
Correlating superconducting qubit performance with advanced materials analysis is a key strategy for improving coherence. Existing diagnostics for key properties, such as dielectric loss, structural discontinuity, and interface heterogeneity, often rely on destructive electron microscopy or low-throughput millikelvin measurements. Here, we demonstrate noninvasive terahertz (THz) nano-imaging/spectroscopy of encapsulated niobium transmon qubits as a high-throughput proxy for performance evaluation. We identify large variations in sidewall near-field signals, implicating sidewall loss and discontinuity as major coherence limiters, and also use THz hyperspectral line scans to probe dielectric responses and field participation at Al junction interfaces.
- 15 September 2025
- Published by AIP Publishing in Applied Physics Letters
- Vol. 127 (11)
Terahertz near-field imaging of sidewall-induced losses in superconducting qubits
Correlating superconducting qubit performance with advanced materials analysis is a key strategy for improving coherence. Existing diagnostics for key properties, such as dielectric loss, structural discontinuity, and interface heterogeneity, often rely on destructive electron microscopy or low-throughput millikelvin measurements. Here, we demonstrate noninvasive terahertz (THz) nano-imaging/spectroscopy of encapsulated niobium transmon qubits as a high-throughput proxy for performance evaluation. We identify large variations in sidewall near-field signals, implicating sidewall loss and discontinuity as major coherence limiters, and also use THz hyperspectral line scans to probe dielectric responses and field participation at Al junction interfaces.
- Open Access
- 6 December 2024
- Published by Elsevier in Acta Materialia
- Vol. 284
Correlating aluminum layer deposition rates, Josephson junction microstructure, and superconducting qubits’ performance
- 6 December 2024
- Published by Elsevier in Acta Materialia
- Vol. 284
Open AccessCorrelating aluminum layer deposition rates, Josephson junction microstructure, and superconducting qubits’ performance
- Open Access
- 5 November 2024
- Published by IOP Publishing in Materials for Quantum Technology
- Vol. 4 (4) , 045101
Enhanced superconducting qubit performance through ammonium fluoride etch
The performance of superconducting qubits is often limited by dissipation and two-level systems (TLS) losses. The dominant sources of these losses are believed to originate from amorphous materials and defects at interfaces and surfaces, likely as a result of fabrication processes or ambient exposure. Here, we explore a novel wet chemical surface treatment at the Josephson junction-substrate and the substrate-air interfaces by replacing a buffered oxide etch (BOE) cleaning process with one that uses hydrofluoric acid followed by aqueous ammonium fluoride. We show that the ammonium fluoride etch process results in a statistically significant improvement in median T 1 by ∼ 22 % (p = 0.002), and a reduction in the number of strongly-coupled TLS in the tunable frequency range. Microwave resonator measurements on samples treated with the ammonium fluoride etch after niobium deposition and etching also show ∼ 33 % lower TLS-induced loss tangent compared to the BOE treated samples. As the chemical treatment primarily modifies the Josephson junction-substrate interface and substrate-air interface, we perform targeted chemical and structural characterizations to examine materials differences at these interfaces and identify multiple microscopic changes that could contribute to decreased TLS losses.
- 5 November 2024
- Published by IOP Publishing in Materials for Quantum Technology
- Vol. 4 (4) , 045101
Open AccessEnhanced superconducting qubit performance through ammonium fluoride etch
The performance of superconducting qubits is often limited by dissipation and two-level systems (TLS) losses. The dominant sources of these losses are believed to originate from amorphous materials and defects at interfaces and surfaces, likely as a result of fabrication processes or ambient exposure. Here, we explore a novel wet chemical surface treatment at the Josephson junction-substrate and the substrate-air interfaces by replacing a buffered oxide etch (BOE) cleaning process with one that uses hydrofluoric acid followed by aqueous ammonium fluoride. We show that the ammonium fluoride etch process results in a statistically significant improvement in median T 1 by ∼ 22 % (p = 0.002), and a reduction in the number of strongly-coupled TLS in the tunable frequency range. Microwave resonator measurements on samples treated with the ammonium fluoride etch after niobium deposition and etching also show ∼ 33 % lower TLS-induced loss tangent compared to the BOE treated samples. As the chemical treatment primarily modifies the Josephson junction-substrate interface and substrate-air interface, we perform targeted chemical and structural characterizations to examine materials differences at these interfaces and identify multiple microscopic changes that could contribute to decreased TLS losses.
- Open Access
- 10 September 2024
- Published by Royal Society of Chemistry (RSC) in Nanoscale Horizons
- Vol. 9 (12) , 2326-2333
Improved high-current-density hydrogen evolution reaction kinetics on single-atom Co embedded in an order pore-structured nitrogen assembly carbon support
Single-atom metal embedded in nitrogen-doped carbon show high HER performance, with Co-NAC reaching 200 mA cm−2 at 310 mV overpotential.
- 10 September 2024
- Published by Royal Society of Chemistry (RSC) in Nanoscale Horizons
- Vol. 9 (12) , 2326-2333
Open AccessImproved high-current-density hydrogen evolution reaction kinetics on single-atom Co embedded in an order pore-structured nitrogen assembly carbon support
Single-atom metal embedded in nitrogen-doped carbon show high HER performance, with Co-NAC reaching 200 mA cm−2 at 310 mV overpotential.
- Open Access
- 12 August 2024
- Published by Springer Nature in Communications Materials
- Vol. 5 (1) , 1-7
Alternating-bias assisted annealing of amorphous oxide tunnel junctions
- 12 August 2024
- Published by Springer Nature in Communications Materials
- Vol. 5 (1) , 1-7
Open AccessAlternating-bias assisted annealing of amorphous oxide tunnel junctions
- Open Access
- 21 July 2024
- Published by American Chemical Society (ACS) in ACS Nano
- Vol. 18 (30) , 19732-19741
Structure and Formation Mechanisms in Tantalum and Niobium Oxides in Superconducting Quantum Circuits
Improving the qubit's lifetime (T1) is crucial for fault-tolerant quantum computing. Recent advancements have shown that replacing niobium (Nb) with tantalum (Ta) as the base metal significantly increases T1, likely due to a less lossy native surface oxide. However, understanding the formation mechanism and nature of both surface oxides is still limited. Using aberration-corrected transmission electron microscopy and electron energy loss spectroscopy, we found that Ta surface oxide has fewer suboxides than Nb oxide. We observed an abrupt oxidation state transition from Ta2O5 to Ta, as opposed to the gradual shift from Nb2O5, NbO2, and NbO to Nb, consistent with thermodynamic modeling. Additionally, amorphous Ta2O5 exhibits a closer-to-crystalline bonding nature than Nb2O5, potentially hindering H atomic diffusion toward the oxide/metal interface. Finally, we propose a loss mechanism arising from the transition between two states within the distorted octahedron in an amorphous structure, potentially causing two-level system loss. Our findings offer a deeper understanding of the differences between native amorphous Ta and Nb oxides, providing valuable insights for advancing superconducting qubits through surface oxide engineering.
- 21 July 2024
- Published by American Chemical Society (ACS) in ACS Nano
- Vol. 18 (30) , 19732-19741
Open AccessStructure and Formation Mechanisms in Tantalum and Niobium Oxides in Superconducting Quantum Circuits
Improving the qubit's lifetime (T1) is crucial for fault-tolerant quantum computing. Recent advancements have shown that replacing niobium (Nb) with tantalum (Ta) as the base metal significantly increases T1, likely due to a less lossy native surface oxide. However, understanding the formation mechanism and nature of both surface oxides is still limited. Using aberration-corrected transmission electron microscopy and electron energy loss spectroscopy, we found that Ta surface oxide has fewer suboxides than Nb oxide. We observed an abrupt oxidation state transition from Ta2O5 to Ta, as opposed to the gradual shift from Nb2O5, NbO2, and NbO to Nb, consistent with thermodynamic modeling. Additionally, amorphous Ta2O5 exhibits a closer-to-crystalline bonding nature than Nb2O5, potentially hindering H atomic diffusion toward the oxide/metal interface. Finally, we propose a loss mechanism arising from the transition between two states within the distorted octahedron in an amorphous structure, potentially causing two-level system loss. Our findings offer a deeper understanding of the differences between native amorphous Ta and Nb oxides, providing valuable insights for advancing superconducting qubits through surface oxide engineering.