Xinyi Shen
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Xinyi Shen has a total of 11 co-authors. Here are the top co-authors by number of shared publications:
- Xiang Wan
Nanjing University of Posts and Telecommunications
2 shared publications - Xiaojuan Lian
College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China
2 shared publications - Yi Tong
College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, People’s Republic of China
2 shared publications - Ertao Hu
College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
1 shared publication - Jianguang Xu
The School of Materials Science and Engineering, Yancheng Institute of Technology, 211 East Jianjun Road, Yancheng 224051, China
1 shared publication - Jinke Fu
The Department of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
1 shared publication
Latest Publications
- Open Access
- 9 December 2020
- Published by MDPI AG in Electronics
- Vol. 9 (12) , 2098
Electrical Properties and Biological Synaptic Simulation of Ag/MXene/SiO2/Pt RRAM Devices
Utilizing electronic devices to emulate biological synapses for the construction of artificial neural networks has provided a feasible research approach for the future development of artificial intelligence systems. Until now, different kinds of electronic devices have been proposed in the realization of biological synapse functions. However, the device stability and the power consumption are major challenges for future industrialization applications. Herein, an electronic synapse of MXene/SiO2 structure-based resistive random-access memory (RRAM) devices has been designed and fabricated by taking advantage of the desirable properties of SiO2 and 2D MXene material. The proposed RRAM devices, Ag/MXene/SiO2/Pt, exhibit the resistance switching characteristics where both the volatile and nonvolatile behaviors coexist in a single device. These intriguing features of the Ag/MXene/SiO2/Pt devices make them more applicable for emulating biological synaptic plasticity. Additionally, the conductive mechanisms of the Ag/MXene/SiO2/Pt RRAM devices have been discussed on the basis of our experimental results.
- 9 December 2020
- Published by MDPI AG in Electronics
- Vol. 9 (12) , 2098
Open AccessElectrical Properties and Biological Synaptic Simulation of Ag/MXene/SiO2/Pt RRAM Devices
Utilizing electronic devices to emulate biological synapses for the construction of artificial neural networks has provided a feasible research approach for the future development of artificial intelligence systems. Until now, different kinds of electronic devices have been proposed in the realization of biological synapse functions. However, the device stability and the power consumption are major challenges for future industrialization applications. Herein, an electronic synapse of MXene/SiO2 structure-based resistive random-access memory (RRAM) devices has been designed and fabricated by taking advantage of the desirable properties of SiO2 and 2D MXene material. The proposed RRAM devices, Ag/MXene/SiO2/Pt, exhibit the resistance switching characteristics where both the volatile and nonvolatile behaviors coexist in a single device. These intriguing features of the Ag/MXene/SiO2/Pt devices make them more applicable for emulating biological synaptic plasticity. Additionally, the conductive mechanisms of the Ag/MXene/SiO2/Pt RRAM devices have been discussed on the basis of our experimental results.
- Open Access
- 1 June 2019
- Published by MDPI AG in Micromachines
- Vol. 10 (6) , 369
Resistance Switching Statistics and Mechanisms of Pt Dispersed Silicon Oxide-Based Memristors
Silicon oxide-based memristors have been extensively studied due to their compatibility with the dominant silicon complementary metal–oxide–semiconductor (CMOS) fabrication technology. However, the variability of resistance switching (RS) parameters is one of the major challenges for commercialization applications. Owing to the filamentary nature of most RS devices, the variability of RS parameters can be reduced by doping in the RS region, where conductive filaments (CFs) can grow along the locations of impurities. In this work, we have successfully obtained RS characteristics in Pt dispersed silicon oxide-based memristors. The RS variabilities and mechanisms have been analyzed by screening the statistical data into different resistance ranges, and the distributions are shown to be compatible with a Weibull distribution. Additionally, a quantum points contact (QPC) model has been validated to account for the conductive mechanism and further sheds light on the evolution of the CFs during RS processes.
- 1 June 2019
- Published by MDPI AG in Micromachines
- Vol. 10 (6) , 369
Open AccessResistance Switching Statistics and Mechanisms of Pt Dispersed Silicon Oxide-Based Memristors
Silicon oxide-based memristors have been extensively studied due to their compatibility with the dominant silicon complementary metal–oxide–semiconductor (CMOS) fabrication technology. However, the variability of resistance switching (RS) parameters is one of the major challenges for commercialization applications. Owing to the filamentary nature of most RS devices, the variability of RS parameters can be reduced by doping in the RS region, where conductive filaments (CFs) can grow along the locations of impurities. In this work, we have successfully obtained RS characteristics in Pt dispersed silicon oxide-based memristors. The RS variabilities and mechanisms have been analyzed by screening the statistical data into different resistance ranges, and the distributions are shown to be compatible with a Weibull distribution. Additionally, a quantum points contact (QPC) model has been validated to account for the conductive mechanism and further sheds light on the evolution of the CFs during RS processes.