Jianguang Xu
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Research Interests
Jianguang Xu has a total of 8 co-authors. Here are the top co-authors by number of shared publications:
- Ertao Hu
College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
1 shared publication - Jinke Fu
The Department of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
1 shared publication - Xiang Wan
Nanjing University of Posts and Telecommunications
1 shared publication - Xiaojuan Lian
College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China
1 shared publication - Xiaoyan Liu
Nanjing University of Posts and Telecommunications
1 shared publication - Xinyi Shen
The Department of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
1 shared publication
Latest Publications
- Open Access
- 9 December 2020
- Published by MDPI AG in Electronics
- Vol. 9 (12) , 2098
Electrical Properties and Biological Synaptic Simulation of Ag/MXene/SiO2/Pt RRAM Devices
Utilizing electronic devices to emulate biological synapses for the construction of artificial neural networks has provided a feasible research approach for the future development of artificial intelligence systems. Until now, different kinds of electronic devices have been proposed in the realization of biological synapse functions. However, the device stability and the power consumption are major challenges for future industrialization applications. Herein, an electronic synapse of MXene/SiO2 structure-based resistive random-access memory (RRAM) devices has been designed and fabricated by taking advantage of the desirable properties of SiO2 and 2D MXene material. The proposed RRAM devices, Ag/MXene/SiO2/Pt, exhibit the resistance switching characteristics where both the volatile and nonvolatile behaviors coexist in a single device. These intriguing features of the Ag/MXene/SiO2/Pt devices make them more applicable for emulating biological synaptic plasticity. Additionally, the conductive mechanisms of the Ag/MXene/SiO2/Pt RRAM devices have been discussed on the basis of our experimental results.
- 9 December 2020
- Published by MDPI AG in Electronics
- Vol. 9 (12) , 2098
Open AccessElectrical Properties and Biological Synaptic Simulation of Ag/MXene/SiO2/Pt RRAM Devices
Utilizing electronic devices to emulate biological synapses for the construction of artificial neural networks has provided a feasible research approach for the future development of artificial intelligence systems. Until now, different kinds of electronic devices have been proposed in the realization of biological synapse functions. However, the device stability and the power consumption are major challenges for future industrialization applications. Herein, an electronic synapse of MXene/SiO2 structure-based resistive random-access memory (RRAM) devices has been designed and fabricated by taking advantage of the desirable properties of SiO2 and 2D MXene material. The proposed RRAM devices, Ag/MXene/SiO2/Pt, exhibit the resistance switching characteristics where both the volatile and nonvolatile behaviors coexist in a single device. These intriguing features of the Ag/MXene/SiO2/Pt devices make them more applicable for emulating biological synaptic plasticity. Additionally, the conductive mechanisms of the Ag/MXene/SiO2/Pt RRAM devices have been discussed on the basis of our experimental results.