Hiroya Shike
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Hiroya Shike has a total of 38 co-authors. Here are the top co-authors by number of shared publications:
- Maasa Murata
Graduate School of Engineering, Tohoku University, Sendai, Japan
3 shared publications - Rihito Kuroda
Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
3 shared publications - Yasuyuki Fujihara
Graduate School of Engineering, Tohoku University, Sendai, Japan
3 shared publications Shigetoshi Sugawa
New Industry Creation Hatchery Center, Tohoku University, Sendai, Japan
2 shared publications- Chia-Chi Kuo
Graduate School of Engineering, Tohoku University, Sendai, Japan
1 shared publication Jun Miyawaki
Institute for Solid State Physics (ISSP), The University of Tokyo, Chiba, Japan
1 shared publication
Latest Publications
- Open Access
- 19 April 2022
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 69 (6) , 2965-2972
A 70-dB SNR High-Speed Global Shutter CMOS Image Sensor for in Situ Fluid Concentration Distribution Measurements
This article presents a global shutter (GS) high signal-to-noise ratio (SNR) and a high-frame-rate CMOS image sensor (CIS) for in situ fluid concentration distribution measurements using absorption imaging. The pixel consists of a ultraviolet (UV)-visible-near infrared (NIR) waveband pinned photodiode (PD) with high robustness against UV light irradiation for various measurement objects, two-stage lateral overflow integration capacitors (LOFIC) for high dynamic range and high SNR, and a voltage-domain memory bank for GS. The developed prototype CIS with 22.4- $\mu \text{m}$ pitch pixels exhibited 69.7-dB maximum SNR, 123-dB dynamic range, and 1000-frames/s maximum frame rate under single exposure GS and successfully captured images of dynamic movement of NO 2 gas concentration distribution in the vacuum chamber for 300-mm-diameter wafers.
- 19 April 2022
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 69 (6) , 2965-2972
Open AccessA 70-dB SNR High-Speed Global Shutter CMOS Image Sensor for in Situ Fluid Concentration Distribution Measurements
This article presents a global shutter (GS) high signal-to-noise ratio (SNR) and a high-frame-rate CMOS image sensor (CIS) for in situ fluid concentration distribution measurements using absorption imaging. The pixel consists of a ultraviolet (UV)-visible-near infrared (NIR) waveband pinned photodiode (PD) with high robustness against UV light irradiation for various measurement objects, two-stage lateral overflow integration capacitors (LOFIC) for high dynamic range and high SNR, and a voltage-domain memory bank for GS. The developed prototype CIS with 22.4- $\mu \text{m}$ pitch pixels exhibited 69.7-dB maximum SNR, 123-dB dynamic range, and 1000-frames/s maximum frame rate under single exposure GS and successfully captured images of dynamic movement of NO 2 gas concentration distribution in the vacuum chamber for 300-mm-diameter wafers.
- Open Access
- 15 March 2021
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 68 (4) , 2056-2063
A Global Shutter Wide Dynamic Range Soft X-Ray CMOS Image Sensor With Backside- Illuminated Pinned Photodiode, Two-Stage Lateral Overflow Integration Capacitor, and Voltage Domain Memory Bank
This article presents a prototype 22.4 μ\textm pixel pitch global shutter (GS) wide dynamic range (WDR) soft X-ray CMOS image sensor (sxCMOS). Backside-illuminated (BSI) pinned photodiodes with a 45- μ\textm thick Si substrate were introduced for low noise and high radiation hardness to high energy photons. Two-stage lateral overflow integration capacitor (LOFIC) and voltage domain memory bank with high-density Si trench capacitors were introduced for WDR and for GS. The developed sxCMOS achieved maximum 21.9 Me - full well capacity with a single exposure 129 dB dynamic range by GS operation. Over 70% quantum efficiency (QE) toward soft X-ray was successfully achieved. The developed prototype sxCMOS is a step forward toward a 4 M pixel detector system to be utilized in next-generation synchrotron radiation facilities and X-ray free-electron lasers.
- 15 March 2021
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 68 (4) , 2056-2063
Open AccessA Global Shutter Wide Dynamic Range Soft X-Ray CMOS Image Sensor With Backside- Illuminated Pinned Photodiode, Two-Stage Lateral Overflow Integration Capacitor, and Voltage Domain Memory Bank
This article presents a prototype 22.4 μ\textm pixel pitch global shutter (GS) wide dynamic range (WDR) soft X-ray CMOS image sensor (sxCMOS). Backside-illuminated (BSI) pinned photodiodes with a 45- μ\textm thick Si substrate were introduced for low noise and high radiation hardness to high energy photons. Two-stage lateral overflow integration capacitor (LOFIC) and voltage domain memory bank with high-density Si trench capacitors were introduced for WDR and for GS. The developed sxCMOS achieved maximum 21.9 Me - full well capacity with a single exposure 129 dB dynamic range by GS operation. Over 70% quantum efficiency (QE) toward soft X-ray was successfully achieved. The developed prototype sxCMOS is a step forward toward a 4 M pixel detector system to be utilized in next-generation synchrotron radiation facilities and X-ray free-electron lasers.
- 12 December 2020
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 16.4.1-16.4.4
A Global Shutter Wide Dynamic Range Soft X-ray CMOS Image Sensor with BSI Pinned Photodiode, Two-stage LOFIC and Voltage Domain Memory Bank
A prototype 22.4μm pixel pitch global shutter wide dynamic range soft X-ray CMOS image sensor (sxCMOS) is presented. The sxCMOS employs backside-illuminated (BSI) pinned photodiode with a 45μm-thick Si substrate for low noise and high light resistance to high energy photons, two-stage LOFIC for wide dynamic range and voltage domain memory bank with high density capacitors for global shutter. The developed chip successfully demonstrated a high quantum efficiency (QE) toward soft X-ray with a single exposure 129dB dynamic range by global shutter.
- 12 December 2020
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 16.4.1-16.4.4
A Global Shutter Wide Dynamic Range Soft X-ray CMOS Image Sensor with BSI Pinned Photodiode, Two-stage LOFIC and Voltage Domain Memory Bank
A prototype 22.4μm pixel pitch global shutter wide dynamic range soft X-ray CMOS image sensor (sxCMOS) is presented. The sxCMOS employs backside-illuminated (BSI) pinned photodiode with a 45μm-thick Si substrate for low noise and high light resistance to high energy photons, two-stage LOFIC for wide dynamic range and voltage domain memory bank with high density capacitors for global shutter. The developed chip successfully demonstrated a high quantum efficiency (QE) toward soft X-ray with a single exposure 129dB dynamic range by global shutter.