Chia-Chi Kuo
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Chia-Chi Kuo has a total of 17 co-authors. Here are the top co-authors by number of shared publications:
- Rihito Kuroda
Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
2 shared publications - Hiroya Shike
Graduate School of Engineering, Tohoku University, Sendai, Japan
1 shared publication Keigo Takahashi
Graduate School of Engineering, Tohoku University, Sendai, Japan
1 shared publication- Maasa Murata
Graduate School of Engineering, Tohoku University, Sendai, Japan
1 shared publication Masaaki Nagase
Fujikin Inc., Osaka, Japan
1 shared publicationNobukazu Ikeda
Fujikin Inc., Osaka, Japan
1 shared publication
Latest Publications
- Open Access
- 15 June 2023
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 59 (2) , 492-501
A 134×132 4-Tap CMOS Indirect Time-of-Flight Range Imager Using In-Pixel Memory Array With 10 Kfps High-Speed Mode and High Precision Mode
This article presents a prototype 4-tap indirect time-of-flight (iToF) CMOS imager with high-speed (HS) range imaging capacity. The sensor features an HS charge modulator, in-pixel memory array, and sub-frame ToF operation, enabling up to 10 Kfps range imaging with eight recording frames and $<$ 1.82% depth noise for 0.3–1.4 m range under HS mode. This sensor also operates in high-precision (HP) mode, achieving $<$ 1.77% depth noise for the 0.4–5.4 m range at 90 frames/s by averaging the subframe signals. With a pixel size of 22.4 $^{H}$ $\times$ 16 $^{V}$ $\mu$ m and 134 $^{H}$ $\times$ 132 $^{V}$ 4-tap pixel array, the sensor successfully demonstrated precise depth imaging under HP mode and clear 3-D imaging for rapid motion objects under HS mode. The potential application of the sensor and future improvements are also discussed.
- 15 June 2023
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 59 (2) , 492-501
Open AccessA 134×132 4-Tap CMOS Indirect Time-of-Flight Range Imager Using In-Pixel Memory Array With 10 Kfps High-Speed Mode and High Precision Mode
This article presents a prototype 4-tap indirect time-of-flight (iToF) CMOS imager with high-speed (HS) range imaging capacity. The sensor features an HS charge modulator, in-pixel memory array, and sub-frame ToF operation, enabling up to 10 Kfps range imaging with eight recording frames and $<$ 1.82% depth noise for 0.3–1.4 m range under HS mode. This sensor also operates in high-precision (HP) mode, achieving $<$ 1.77% depth noise for the 0.4–5.4 m range at 90 frames/s by averaging the subframe signals. With a pixel size of 22.4 $^{H}$ $\times$ 16 $^{V}$ $\mu$ m and 134 $^{H}$ $\times$ 132 $^{V}$ 4-tap pixel array, the sensor successfully demonstrated precise depth imaging under HP mode and clear 3-D imaging for rapid motion objects under HS mode. The potential application of the sensor and future improvements are also discussed.
- Open Access
- 19 April 2022
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 69 (6) , 2965-2972
A 70-dB SNR High-Speed Global Shutter CMOS Image Sensor for in Situ Fluid Concentration Distribution Measurements
This article presents a global shutter (GS) high signal-to-noise ratio (SNR) and a high-frame-rate CMOS image sensor (CIS) for in situ fluid concentration distribution measurements using absorption imaging. The pixel consists of a ultraviolet (UV)-visible-near infrared (NIR) waveband pinned photodiode (PD) with high robustness against UV light irradiation for various measurement objects, two-stage lateral overflow integration capacitors (LOFIC) for high dynamic range and high SNR, and a voltage-domain memory bank for GS. The developed prototype CIS with 22.4- $\mu \text{m}$ pitch pixels exhibited 69.7-dB maximum SNR, 123-dB dynamic range, and 1000-frames/s maximum frame rate under single exposure GS and successfully captured images of dynamic movement of NO 2 gas concentration distribution in the vacuum chamber for 300-mm-diameter wafers.
- 19 April 2022
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 69 (6) , 2965-2972
Open AccessA 70-dB SNR High-Speed Global Shutter CMOS Image Sensor for in Situ Fluid Concentration Distribution Measurements
This article presents a global shutter (GS) high signal-to-noise ratio (SNR) and a high-frame-rate CMOS image sensor (CIS) for in situ fluid concentration distribution measurements using absorption imaging. The pixel consists of a ultraviolet (UV)-visible-near infrared (NIR) waveband pinned photodiode (PD) with high robustness against UV light irradiation for various measurement objects, two-stage lateral overflow integration capacitors (LOFIC) for high dynamic range and high SNR, and a voltage-domain memory bank for GS. The developed prototype CIS with 22.4- $\mu \text{m}$ pitch pixels exhibited 69.7-dB maximum SNR, 123-dB dynamic range, and 1000-frames/s maximum frame rate under single exposure GS and successfully captured images of dynamic movement of NO 2 gas concentration distribution in the vacuum chamber for 300-mm-diameter wafers.