Shoma Harada
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Research Interests
Shoma Harada has a total of 15 co-authors. Here are the top co-authors by number of shared publications:
- Hiroya Shike
Graduate School of Engineering, Tohoku University, Sendai, Japan
1 shared publication Jun Miyawaki
Institute for Solid State Physics (ISSP), The University of Tokyo, Chiba, Japan
1 shared publication- Maasa Murata
Graduate School of Engineering, Tohoku University, Sendai, Japan
1 shared publication Manabu Suzuki
Graduate School of Engineering, Tohoku University, Sendai, Japan
1 shared publicationNaoya Kuriyama
LAPIS Semiconductor Company, Ltd., Kurokawa, Japan
1 shared publication- Rihito Kuroda
Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
1 shared publication
Latest Publications
- Open Access
- 15 March 2021
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 68 (4) , 2056-2063
A Global Shutter Wide Dynamic Range Soft X-Ray CMOS Image Sensor With Backside- Illuminated Pinned Photodiode, Two-Stage Lateral Overflow Integration Capacitor, and Voltage Domain Memory Bank
This article presents a prototype 22.4 μ\textm pixel pitch global shutter (GS) wide dynamic range (WDR) soft X-ray CMOS image sensor (sxCMOS). Backside-illuminated (BSI) pinned photodiodes with a 45- μ\textm thick Si substrate were introduced for low noise and high radiation hardness to high energy photons. Two-stage lateral overflow integration capacitor (LOFIC) and voltage domain memory bank with high-density Si trench capacitors were introduced for WDR and for GS. The developed sxCMOS achieved maximum 21.9 Me - full well capacity with a single exposure 129 dB dynamic range by GS operation. Over 70% quantum efficiency (QE) toward soft X-ray was successfully achieved. The developed prototype sxCMOS is a step forward toward a 4 M pixel detector system to be utilized in next-generation synchrotron radiation facilities and X-ray free-electron lasers.
- 15 March 2021
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 68 (4) , 2056-2063
Open AccessA Global Shutter Wide Dynamic Range Soft X-Ray CMOS Image Sensor With Backside- Illuminated Pinned Photodiode, Two-Stage Lateral Overflow Integration Capacitor, and Voltage Domain Memory Bank
This article presents a prototype 22.4 μ\textm pixel pitch global shutter (GS) wide dynamic range (WDR) soft X-ray CMOS image sensor (sxCMOS). Backside-illuminated (BSI) pinned photodiodes with a 45- μ\textm thick Si substrate were introduced for low noise and high radiation hardness to high energy photons. Two-stage lateral overflow integration capacitor (LOFIC) and voltage domain memory bank with high-density Si trench capacitors were introduced for WDR and for GS. The developed sxCMOS achieved maximum 21.9 Me - full well capacity with a single exposure 129 dB dynamic range by GS operation. Over 70% quantum efficiency (QE) toward soft X-ray was successfully achieved. The developed prototype sxCMOS is a step forward toward a 4 M pixel detector system to be utilized in next-generation synchrotron radiation facilities and X-ray free-electron lasers.