Fahd A. Mohiyaddin
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
Fahd A. Mohiyaddin has a total of 73 co-authors. Here are the top co-authors by number of shared publications:
- Bogdan Govoreanu
IMEC, Leuven, Belgium
4 shared publications - Iuliana Radu
Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
3 shared publications - Anton Potočnik
IMEC Kapeldreef 75 B-3001 Leuven Belgium
2 shared publications - Francky Catthoor
National Technical University of Athens
2 shared publications - Georges Gielen
ESAT-MICAS, KU Leuven, Leuven, Flemish Brabant, Belgium
2 shared publications - Nard Dumoulin Stuyck
School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney, Australia
2 shared publications
Latest Publications
- Top Cited PapersOpen Access
- 25 December 2024
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 25 (2) , 793-799
12-Spin-Qubit Arrays Fabricated on a 300 mm Semiconductor Manufacturing Line
Intel's efforts to build a practical quantum computer are focused on developing a scalable spin-qubit platform leveraging industrial high-volume semiconductor manufacturing expertise and 300 mm fabrication infrastructure. Here, we provide an overview of the design, fabrication, and demonstration of a new customized quantum test chip, which contains 12-quantum-dot spin-qubit linear arrays, code named Tunnel Falls. These devices are fabricated using immersion and extreme ultraviolet lithography (EUV), along with other standard high-volume manufacturing (HVM) processes as well as production-level process control. We present key device features and fabrication details as well as qubit characterization results confirming device functionality. These results corroborate our fabrication methods and are a crucial step toward scaling of extensible 2D qubit array schemes.
- 25 December 2024
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 25 (2) , 793-799
Top Cited PapersOpen Access12-Spin-Qubit Arrays Fabricated on a 300 mm Semiconductor Manufacturing Line
Intel's efforts to build a practical quantum computer are focused on developing a scalable spin-qubit platform leveraging industrial high-volume semiconductor manufacturing expertise and 300 mm fabrication infrastructure. Here, we provide an overview of the design, fabrication, and demonstration of a new customized quantum test chip, which contains 12-quantum-dot spin-qubit linear arrays, code named Tunnel Falls. These devices are fabricated using immersion and extreme ultraviolet lithography (EUV), along with other standard high-volume manufacturing (HVM) processes as well as production-level process control. We present key device features and fabrication details as well as qubit characterization results confirming device functionality. These results corroborate our fabrication methods and are a crucial step toward scaling of extensible 2D qubit array schemes.
- 12 June 2022
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 230-231
Scalable 1.4 μW cryo-CMOS SP4T multiplexer operating at 10 mK for high-fidelity superconducting qubit measurements
In this work, we report on the electrical performance of an ultra-low-power cryo-CMOS single-pole-4-throw (SP4T) RF multiplexer working at 10 mK base temperature stage of a dilution refrigerator. We use the multiplexer to benchmark a superconducting qubit for the very first time and obtain qubit coherence times of over 35 μs along with an average single-qubit gate fidelity of 99.93%, which exceeds the threshold required for quantum error-correction based on surface-code. This work demonstrates the operability of superconducting qubits with ultra-low-power cryo-CMOS devices at the base temperature, paving the way for advanced co-integration schemes.
- 12 June 2022
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 230-231
Scalable 1.4 μW cryo-CMOS SP4T multiplexer operating at 10 mK for high-fidelity superconducting qubit measurements
In this work, we report on the electrical performance of an ultra-low-power cryo-CMOS single-pole-4-throw (SP4T) RF multiplexer working at 10 mK base temperature stage of a dilution refrigerator. We use the multiplexer to benchmark a superconducting qubit for the very first time and obtain qubit coherence times of over 35 μs along with an average single-qubit gate fidelity of 99.93%, which exceeds the threshold required for quantum error-correction based on surface-code. This work demonstrates the operability of superconducting qubits with ultra-low-power cryo-CMOS devices at the base temperature, paving the way for advanced co-integration schemes.
- 30 August 2021
- Published by AIP Publishing in Applied Physics Letters
- Vol. 119 (9) , 094001
Low dephasing and robust micromagnet designs for silicon spin qubits
Using micromagnets to enable electron spin manipulation in silicon qubits has emerged as a very popular method, enabling single-qubit gate fidelities larger than 99.9%. However, these micromagnets also apply stray magnetic field gradients onto the qubits, making the spin states susceptible to electric field noise and limiting their coherence times. We describe here a magnet design that minimizes qubit dephasing, while allowing for fast qubit control and addressability. Specifically, we design and optimize magnet dimensions and positions relative to the quantum dots, minimizing dephasing from magnetic field gradients. The micromagnet-induced dephasing rates with this design are up to three orders of magnitude lower than state-of-the-art implementations, allowing for long coherence times. This design is robust against fabrication errors and can be combined with a wide variety of silicon qubit device geometries, thereby allowing exploration of coherence limiting factors and novel upscaling approaches.
- 30 August 2021
- Published by AIP Publishing in Applied Physics Letters
- Vol. 119 (9) , 094001
Low dephasing and robust micromagnet designs for silicon spin qubits
Using micromagnets to enable electron spin manipulation in silicon qubits has emerged as a very popular method, enabling single-qubit gate fidelities larger than 99.9%. However, these micromagnets also apply stray magnetic field gradients onto the qubits, making the spin states susceptible to electric field noise and limiting their coherence times. We describe here a magnet design that minimizes qubit dephasing, while allowing for fast qubit control and addressability. Specifically, we design and optimize magnet dimensions and positions relative to the quantum dots, minimizing dephasing from magnetic field gradients. The micromagnet-induced dephasing rates with this design are up to three orders of magnitude lower than state-of-the-art implementations, allowing for long coherence times. This design is robust against fabrication errors and can be combined with a wide variety of silicon qubit device geometries, thereby allowing exploration of coherence limiting factors and novel upscaling approaches.
- 1 February 2021
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 968-973
Circuit models for the co-simulation of superconducting quantum computing systems
Quantum computers based on superconducting qubits have emerged as a leading candidate for a scalable quantum processor architecture. The core of a quantum processor consists of quantum devices that are manipulated using classical electronic circuits, which need to be co-designed for optimal performance and operation. As the principles governing the behavior of the classical circuits and the quantum devices are different, this presents a unique challenge in terms of the simulation, design and optimization of the joint system. A methodology is presented to transform the behavior of small-scale quantum processors to equivalent circuit models that are usable with classical circuits in a generic electrical simulator, enabling the detailed analysis of the impact of many important non-idealities. The methodology has specifically been employed to derive a circuit model of a superconducting qubit interacting with the quantized electromagnetic field of a superconducting resonator. Based on this technique, a comprehensive analysis of the qubit operation is performed, including the coherent control and readout of the qubit using electrical signals. Furthermore, the effect of several non-idealities in the system such as qubit relaxation, decoherence and leakage out of the computational subspace are captured, in contrast to previous works. As the presented method enables the co-simulation of the control electronics with the quantum system, it facilitates the design and optimization of near-term superconducting quantum processors.
- 1 February 2021
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 968-973
Circuit models for the co-simulation of superconducting quantum computing systems
Quantum computers based on superconducting qubits have emerged as a leading candidate for a scalable quantum processor architecture. The core of a quantum processor consists of quantum devices that are manipulated using classical electronic circuits, which need to be co-designed for optimal performance and operation. As the principles governing the behavior of the classical circuits and the quantum devices are different, this presents a unique challenge in terms of the simulation, design and optimization of the joint system. A methodology is presented to transform the behavior of small-scale quantum processors to equivalent circuit models that are usable with classical circuits in a generic electrical simulator, enabling the detailed analysis of the impact of many important non-idealities. The methodology has specifically been employed to derive a circuit model of a superconducting qubit interacting with the quantized electromagnetic field of a superconducting resonator. Based on this technique, a comprehensive analysis of the qubit operation is performed, including the coherent control and readout of the qubit using electrical signals. Furthermore, the effect of several non-idealities in the system such as qubit relaxation, decoherence and leakage out of the computational subspace are captured, in contrast to previous works. As the presented method enables the co-simulation of the control electronics with the quantum system, it facilitates the design and optimization of near-term superconducting quantum processors.
- 23 September 2020
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 253-256
TCAD-Assisted MultiPhysics Modeling & Simulation for Accelerating Silicon Quantum Dot Qubit Design
- 23 September 2020
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 253-256
TCAD-Assisted MultiPhysics Modeling & Simulation for Accelerating Silicon Quantum Dot Qubit Design
- Open Access
- 19 September 2016
- Published by IOP Publishing in Nanotechnology
- Vol. 27 (42) , 424002
A computational workflow for designing silicon donor qubits
Developing devices that can reliably and accurately demonstrate the principles of superposition and entanglement is an on-going challenge for the quantum computing community. Modeling and simulation offer attractive means of testing early device designs and establishing expectations for operational performance. However, the complex integrated material systems required by quantum device designs are not captured by any single existing computational modeling method. We examine the development and analysis of a multi-staged computational workflow that can be used to design and characterize silicon donor qubit systems with modeling and simulation. Our approach integrates quantum chemistry calculations with electrostatic field solvers to perform detailed simulations of a phosphorus dopant in silicon. We show how atomistic details can be synthesized into an operational model for the logical gates that define quantum computation in this particular technology. The resulting computational workflow realizes a design tool for silicon donor qubits that can help verify and validate current and near-term experimental devices.
- 19 September 2016
- Published by IOP Publishing in Nanotechnology
- Vol. 27 (42) , 424002
Open AccessA computational workflow for designing silicon donor qubits
Developing devices that can reliably and accurately demonstrate the principles of superposition and entanglement is an on-going challenge for the quantum computing community. Modeling and simulation offer attractive means of testing early device designs and establishing expectations for operational performance. However, the complex integrated material systems required by quantum device designs are not captured by any single existing computational modeling method. We examine the development and analysis of a multi-staged computational workflow that can be used to design and characterize silicon donor qubit systems with modeling and simulation. Our approach integrates quantum chemistry calculations with electrostatic field solvers to perform detailed simulations of a phosphorus dopant in silicon. We show how atomistic details can be synthesized into an operational model for the logical gates that define quantum computation in this particular technology. The resulting computational workflow realizes a design tool for silicon donor qubits that can help verify and validate current and near-term experimental devices.