Vahe V. Buniatyan
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Vahe V. Buniatyan has a total of 6 co-authors. Here are the top co-authors by number of shared publications:
- Arshak Poghossian
MicroNanoBio, 40479 Düsseldorf, Germany
1 shared publication - Ferdinand V. Gasparyan
Yerevan State University
1 shared publication - Michael Josef Schöening
Institute of Nano- and Biotechnologies (INB), Aachen University of Applied Sciences, Campus Jülich, 52428 Jülich, Germany
1 shared publication - Patrick Soukiassian
Commissariat à l’Energie Atomique, DSM-DRECAM-SRSIM, Bâtiment 462, Centre d’Etudes de Saclay, 91191 Gif sur Yvette Cedex, France
1 shared publication - Rene Welden
Institute of Nano- and Biotechnologies (INB), FH Aachen, Campus Jülich, Heinrich-Mußmannstr. 1, 52428 Jülich, Germany
1 shared publication - V.M. Aroutiounian
Yerevan State University, 1 Manoukian St., Yerevan 375049, Armenia
1 shared publication
Latest Publications
- Open Access
An Array of On-Chip Integrated, Individually Addressable Capacitive Field-Effect Sensors with Control Gate: Design and Modelling
The on-chip integration of multiple biochemical sensors based on field-effect electrolyte-insulator-semiconductor capacitors (EISCAP) is challenging due to technological difficulties in realization of electrically isolated EISCAPs on the same Si chip. In this work, we present a new simple design for an array of on-chip integrated, individually electrically addressable EISCAPs with an additional control gate (CG-EISCAP). The existence of the CG enables an addressable activation or deactivation of on-chip integrated individual CG-EISCAPs by simple electrical switching the CG of each sensor in various setups, and makes the new design capable for multianalyte detection without cross-talk effects between the sensors in the array. The new designed CG-EISCAP chip was modelled in so-called floating/short-circuited and floating/capacitively-coupled setups, and the corresponding electrical equivalent circuits were developed. In addition, the capacitance-voltage curves of the CG-EISCAP chip in different setups were simulated and compared with that of a single EISCAP sensor. Moreover, the sensitivity of the CG-EISCAP chip to surface potential changes induced by biochemical reactions was simulated and an impact of different parameters, such as gate voltage, insulator thickness and doping concentration in Si, on the sensitivity has been discussed.
Open AccessAn Array of On-Chip Integrated, Individually Addressable Capacitive Field-Effect Sensors with Control Gate: Design and Modelling
The on-chip integration of multiple biochemical sensors based on field-effect electrolyte-insulator-semiconductor capacitors (EISCAP) is challenging due to technological difficulties in realization of electrically isolated EISCAPs on the same Si chip. In this work, we present a new simple design for an array of on-chip integrated, individually electrically addressable EISCAPs with an additional control gate (CG-EISCAP). The existence of the CG enables an addressable activation or deactivation of on-chip integrated individual CG-EISCAPs by simple electrical switching the CG of each sensor in various setups, and makes the new design capable for multianalyte detection without cross-talk effects between the sensors in the array. The new designed CG-EISCAP chip was modelled in so-called floating/short-circuited and floating/capacitively-coupled setups, and the corresponding electrical equivalent circuits were developed. In addition, the capacitance-voltage curves of the CG-EISCAP chip in different setups were simulated and compared with that of a single EISCAP sensor. Moreover, the sensitivity of the CG-EISCAP chip to surface potential changes induced by biochemical reactions was simulated and an impact of different parameters, such as gate voltage, insulator thickness and doping concentration in Si, on the sensitivity has been discussed.
- 17 December 2001
- Published by Elsevier in Applied Surface Science
- Vol. 184 (1-4) , 466-470
Sensitivity of p–n junction based on SiC doped with deep impurity acceptor levels
- 17 December 2001
- Published by Elsevier in Applied Surface Science
- Vol. 184 (1-4) , 466-470
Sensitivity of p–n junction based on SiC doped with deep impurity acceptor levels