Jijun Qiu
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Jijun Qiu has a total of 73 co-authors. Here are the top co-authors by number of shared publications:
Yun Liu
School of Integrated Circuits
10 shared publicationsLeisheng Su
School of Integrated Circuits, Dalian University of Technology, Dalian, People’s Republic of China
6 shared publicationsDong Yang
Chongqing Institute of Green and Intelligent Technology
5 shared publicationsGuodong Zhang
School of Integrated Circuits, Dalian University of Technology, Dalian, People’s Republic of China
5 shared publications- Leisheng Su
School of Integrated Circuits, Dalian University of Technology, Dalian 116024, China
5 shared publications Yiming Yang
School of Integrated Circuits, Dalian University of Technology, Dalian 116024, China
5 shared publications
Latest Publications
- 15 June 2026
- Published by American Chemical Society (ACS) in Crystal Growth & Design
- Vol. 26 (13) , 4998-5005
Low Noise Mixed-Dimensional Uncooled PbSe/InSe/Bi 2 Se 3 van der Waals Barrier Infrared Detector
- 15 June 2026
- Published by American Chemical Society (ACS) in Crystal Growth & Design
- Vol. 26 (13) , 4998-5005
Low Noise Mixed-Dimensional Uncooled PbSe/InSe/Bi 2 Se 3 van der Waals Barrier Infrared Detector
- 7 March 2026
- Published by Springer Nature in Journal of Materials Science: Materials in Electronics
- Vol. 37 (7) , 511
Non-monotonic low-temperature photocurrent in VPD-PbSe photodetectors
- 7 March 2026
- Published by Springer Nature in Journal of Materials Science: Materials in Electronics
- Vol. 37 (7) , 511
Non-monotonic low-temperature photocurrent in VPD-PbSe photodetectors
- 6 March 2026
- Published by American Chemical Society (ACS) in ACS Applied Materials & Interfaces
- Vol. 18 (10) , 15837-15845
Monolithic PbSe/Ge/Si Heteroepitaxial Architecture for Uncooled Dual-Band Infrared Detection
Limitations in heteroepitaxial growth and material property modulation present a formidable challenge for the development of near-infrared-midwave infrared (NIR-MIR) dual-band uncooled detectors capable of operating in both quantum communication and thermal analysis applications. Leveraging our proposed substrate surface selenization technique, we demonstrate a PbSe/Ge/Si heterostructure enabling response at NIR and MIR. The device achieves a room-temperature responsivity of 0.43 A·W-1 at 2700 nm and 0.7 A·W-1 at 1550 nm under laser illumination. Blackbody testing reveals peak detectivities (D*) of 4.2 × 109 cm·Hz1/2·W-1 at 3.7 μm and 3.5 × 109 cm·Hz1/2·W-1 at 1.2 μm. Additionally, the theoretically optimized structure shows that a back-to-back n-i-p-i-n architecture could elevate D* to 2.0 × 1010 cm·Hz1/2·W-1 and 9.8 × 1010 cm·Hz1/2·W-1 at MIR and NIR, respectively. This architecture represents a promising step toward compact multispectral systems with room-temperature dual-band sensitivity, which are of interest for field-deployable quantum communication terminals and portable thermal analytics.
- 6 March 2026
- Published by American Chemical Society (ACS) in ACS Applied Materials & Interfaces
- Vol. 18 (10) , 15837-15845
Monolithic PbSe/Ge/Si Heteroepitaxial Architecture for Uncooled Dual-Band Infrared Detection
Limitations in heteroepitaxial growth and material property modulation present a formidable challenge for the development of near-infrared-midwave infrared (NIR-MIR) dual-band uncooled detectors capable of operating in both quantum communication and thermal analysis applications. Leveraging our proposed substrate surface selenization technique, we demonstrate a PbSe/Ge/Si heterostructure enabling response at NIR and MIR. The device achieves a room-temperature responsivity of 0.43 A·W-1 at 2700 nm and 0.7 A·W-1 at 1550 nm under laser illumination. Blackbody testing reveals peak detectivities (D*) of 4.2 × 109 cm·Hz1/2·W-1 at 3.7 μm and 3.5 × 109 cm·Hz1/2·W-1 at 1.2 μm. Additionally, the theoretically optimized structure shows that a back-to-back n-i-p-i-n architecture could elevate D* to 2.0 × 1010 cm·Hz1/2·W-1 and 9.8 × 1010 cm·Hz1/2·W-1 at MIR and NIR, respectively. This architecture represents a promising step toward compact multispectral systems with room-temperature dual-band sensitivity, which are of interest for field-deployable quantum communication terminals and portable thermal analytics.
- 26 January 2026
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry C
- Vol. 14 (13) , 5479-5487
Selenium-assisted surface enhancement single-crystal PbSe/Ge heterojunctions for a high detectivity uncooled mid infrared wavelength photovoltaic detector
IV–VI/Ge heteroepitaxy provides a solution for the epitaxial incompatibility between IV–VI semiconductors and silicon-based read-out integrated circuits (Si-ROICs).
- 26 January 2026
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry C
- Vol. 14 (13) , 5479-5487
Selenium-assisted surface enhancement single-crystal PbSe/Ge heterojunctions for a high detectivity uncooled mid infrared wavelength photovoltaic detector
IV–VI/Ge heteroepitaxy provides a solution for the epitaxial incompatibility between IV–VI semiconductors and silicon-based read-out integrated circuits (Si-ROICs).
- 6 January 2026
- Published by Royal Society of Chemistry (RSC) in Energy & Environmental Science
- Vol. 19 (2) , 691-701
Blocking multifaceted degradation pathways via fluorinated hydrogen-bond armor for stable perovskite solar cells
The long-term operational stability of perovskite solar cells (PSCs) is governed by a complex interplay of multiple coupled degradation mechanisms rather than isolated factors. Key processes including organic cation decomposition, halide anion oxidation, and ion migration do not occur independently but synergistically interact, ultimately leading to progressive lattice degradation and irreversible device failure. In this study, we propose a “fluorinated hydrogen-bond armor” strategy to comprehensively safeguard formamidinium cations (FA+) against deprotonation, shield iodide (I−) from oxidation, and suppress ion migration. 6-Fluoro-lH-benzimidazole-2-thiol (F-MBI) forms a stabilized complex with FA+ through hydrogen bonding. The strongly electronegative fluorine substituent induces local electronic redistribution via a hydrogen-bond-mediated electronic bridge, passivating proton-active sites and mitigating FA+ deprotonation. Simultaneously, the thiol (–SH) group in F-MBI acts as a reducing agent, protecting I from oxidative degradation. Moreover, F-MBI homogenizes the vertical concentration distribution of Cs+ and FA+ within the perovskite, eliminating the concentration gradient that drives ion migration. The F-MBI modified PSCs achieved an outstanding power conversion efficiency (PCE) of 26.51% (stabilized PCE of 25.85%) and retained over 90% of their initial efficiency after continuous maximum power point tracking (MPP) for 1950 hours under the ISOS-L-2 protocol. Furthermore, the incorporation of F-MBI into the fabrication of large-area modules (active area = 64.68 cm2) yielded an impressive PCE of 20.99%, highlighting the broad applicability and scalability. Our work lays a solid scientific foundation for the comprehensive enhancement of perovskite device photostability and the accelerated advancement toward commercialization.
- 6 January 2026
- Published by Royal Society of Chemistry (RSC) in Energy & Environmental Science
- Vol. 19 (2) , 691-701
Blocking multifaceted degradation pathways via fluorinated hydrogen-bond armor for stable perovskite solar cells
The long-term operational stability of perovskite solar cells (PSCs) is governed by a complex interplay of multiple coupled degradation mechanisms rather than isolated factors. Key processes including organic cation decomposition, halide anion oxidation, and ion migration do not occur independently but synergistically interact, ultimately leading to progressive lattice degradation and irreversible device failure. In this study, we propose a “fluorinated hydrogen-bond armor” strategy to comprehensively safeguard formamidinium cations (FA+) against deprotonation, shield iodide (I−) from oxidation, and suppress ion migration. 6-Fluoro-lH-benzimidazole-2-thiol (F-MBI) forms a stabilized complex with FA+ through hydrogen bonding. The strongly electronegative fluorine substituent induces local electronic redistribution via a hydrogen-bond-mediated electronic bridge, passivating proton-active sites and mitigating FA+ deprotonation. Simultaneously, the thiol (–SH) group in F-MBI acts as a reducing agent, protecting I from oxidative degradation. Moreover, F-MBI homogenizes the vertical concentration distribution of Cs+ and FA+ within the perovskite, eliminating the concentration gradient that drives ion migration. The F-MBI modified PSCs achieved an outstanding power conversion efficiency (PCE) of 26.51% (stabilized PCE of 25.85%) and retained over 90% of their initial efficiency after continuous maximum power point tracking (MPP) for 1950 hours under the ISOS-L-2 protocol. Furthermore, the incorporation of F-MBI into the fabrication of large-area modules (active area = 64.68 cm2) yielded an impressive PCE of 20.99%, highlighting the broad applicability and scalability. Our work lays a solid scientific foundation for the comprehensive enhancement of perovskite device photostability and the accelerated advancement toward commercialization.
- 14 August 2025
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry Letters
- Vol. 16 (34) , 8642-8648
Triple-Enhanced Absorption Anisotropy in Arrayed Core–Shell Nanowire Design
One-dimensional semiconductor nanowires (NWs) are natural polarization photodetectors, thanks to their optical absorption anisotropy and efficient electrical transport channels. However, ultrathin NWs beyond practical fabrication capabilities are often required to achieve the desired polarization sensitivity. Here, we demonstrate a configuration of planar arrayed core-shell NW architectures with substantially enhanced absorption dichroism for linearly polarized light. The high polarization ratio originates from synergistic effect of three rational designs: a NW core consisting of indirect-bandgap semiconductor as light-trapping cavity, a thin shell of photosensitive material as light absorber, and arrayed photonic structure for optical interference. By employing all-inorganic halide perovskites, these NW arrays exhibit a dichroic ratio up to 110.5 without the need for ultrathin NWs. The core-shell NW architecture is experimentally feasible and offers insights into design of high-sensitivity polarization photodetectors using optical resonance.
- 14 August 2025
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry Letters
- Vol. 16 (34) , 8642-8648
Triple-Enhanced Absorption Anisotropy in Arrayed Core–Shell Nanowire Design
One-dimensional semiconductor nanowires (NWs) are natural polarization photodetectors, thanks to their optical absorption anisotropy and efficient electrical transport channels. However, ultrathin NWs beyond practical fabrication capabilities are often required to achieve the desired polarization sensitivity. Here, we demonstrate a configuration of planar arrayed core-shell NW architectures with substantially enhanced absorption dichroism for linearly polarized light. The high polarization ratio originates from synergistic effect of three rational designs: a NW core consisting of indirect-bandgap semiconductor as light-trapping cavity, a thin shell of photosensitive material as light absorber, and arrayed photonic structure for optical interference. By employing all-inorganic halide perovskites, these NW arrays exhibit a dichroic ratio up to 110.5 without the need for ultrathin NWs. The core-shell NW architecture is experimentally feasible and offers insights into design of high-sensitivity polarization photodetectors using optical resonance.
- 1 August 2025
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry C
- Vol. 13 (35) , 18108-18117
A high-sensitivity epitaxial Ge/PbSe/CdSe/Bi2Se3 p+pBn+ barrier heterojunction for uncooled middle infrared detection
A new p+pBn+ barrier infrared detector was designed via MBE technology, significantly reducing the room temperature dark current and enhancing the detectivity, which provides a promising solution for next-generation uncooled MWIR detectors.
- 1 August 2025
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry C
- Vol. 13 (35) , 18108-18117
A high-sensitivity epitaxial Ge/PbSe/CdSe/Bi2Se3 p+pBn+ barrier heterojunction for uncooled middle infrared detection
A new p+pBn+ barrier infrared detector was designed via MBE technology, significantly reducing the room temperature dark current and enhancing the detectivity, which provides a promising solution for next-generation uncooled MWIR detectors.
- 21 June 2025
- Published by Elsevier in Applied Surface Science
- Vol. 710
One-step high-performance CBD-PbS film deposition technology for room temperature near infrared detectors
- 21 June 2025
- Published by Elsevier in Applied Surface Science
- Vol. 710
One-step high-performance CBD-PbS film deposition technology for room temperature near infrared detectors
- 30 October 2024
- Published by American Chemical Society (ACS) in ACS Nano
- Vol. 18 (45) , 30978-30986
Ultralong Compositional Gradient Perovskite Nanowires Fabricated by Source-Limiting Anion Exchange
Anion exchange in halide perovskites offers prospective approaches to band gap engineering for miniaturized and integrated optoelectronic devices. However, the band engineering at the nanoscale is uncontrollable due to the rapid and random exchange nature in the liquid or gas phase. Here, we report a source-limiting mechanism in solid-state anion exchange between low-dimensional perovskites, which readily gives access to ultralong compositional gradient nanowires (NWs) with lengths of up to 100 μm. The exchanged NWs remain single-crystalline with intact morphology, while the halogen content exhibits an apparent gradient distribution, leading to a tapered energy band profile along a NW. In the dynamic study of anion behavior, it is shown that the spatial stoichiometric composition can be precisely tuned following Fick's law of diffusion. In addition, self-powered, spectrally resolved photodetectors incorporating multiple detection units within a single gradient NW are demonstrated. This work provides a feasible strategy for the realization of perovskite-based ultracompact optoelectronics, imaging sensors, and other miniaturized semiconductor devices.
- 30 October 2024
- Published by American Chemical Society (ACS) in ACS Nano
- Vol. 18 (45) , 30978-30986
Ultralong Compositional Gradient Perovskite Nanowires Fabricated by Source-Limiting Anion Exchange
Anion exchange in halide perovskites offers prospective approaches to band gap engineering for miniaturized and integrated optoelectronic devices. However, the band engineering at the nanoscale is uncontrollable due to the rapid and random exchange nature in the liquid or gas phase. Here, we report a source-limiting mechanism in solid-state anion exchange between low-dimensional perovskites, which readily gives access to ultralong compositional gradient nanowires (NWs) with lengths of up to 100 μm. The exchanged NWs remain single-crystalline with intact morphology, while the halogen content exhibits an apparent gradient distribution, leading to a tapered energy band profile along a NW. In the dynamic study of anion behavior, it is shown that the spatial stoichiometric composition can be precisely tuned following Fick's law of diffusion. In addition, self-powered, spectrally resolved photodetectors incorporating multiple detection units within a single gradient NW are demonstrated. This work provides a feasible strategy for the realization of perovskite-based ultracompact optoelectronics, imaging sensors, and other miniaturized semiconductor devices.
- 14 August 2024
- Published by Springer Nature in Journal of Materials Science: Materials in Electronics
- Vol. 35 (23) , 1-10
High-quality InSe thin films and PbSe/InSe/PbSe barrier detector by thermally evaporated deposition
- 14 August 2024
- Published by Springer Nature in Journal of Materials Science: Materials in Electronics
- Vol. 35 (23) , 1-10
High-quality InSe thin films and PbSe/InSe/PbSe barrier detector by thermally evaporated deposition