A high-sensitivity epitaxial Ge/PbSe/CdSe/Bi2Se3 p+pBn+ barrier heterojunction for uncooled middle infrared detection
- 1 August 2025
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry C
- Vol. 13 (35) , 18108-18117
Abstract
A new p+pBn+ barrier infrared detector was designed via MBE technology, significantly reducing the room temperature dark current and enhancing the detectivity, which provides a promising solution for next-generation uncooled MWIR detectors.Keywords
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