Thomas Bucher
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Thomas Bucher has a total of 9 co-authors. Here are the top co-authors by number of shared publications:
- Ullrich R. Pfeiffer
University of Wuppertal
2 shared publications Arne Niederbacher
1 shared publication- Bernd Heinemann
Leibniz-Institut fr innovative Mikroelektronik (IHP), Frankfurt (Oder), Germany
1 shared publication - Holger Rücker
IHP-Leibniz-Institut fr innovative Mikroelektronik, Frankfurt (Oder), Germany
1 shared publication - Janusz Grzyb
Institute of High-Frequency and Communication Technology, University of Wuppertal, Wuppertal, Germany
1 shared publication - Klaus Aufinger
Infineon Technologies AG, Neubiberg, Germany
1 shared publication
Latest Publications
- Open Access
- 8 April 2022
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 57 (7) , 2024-2034
A Broadband 300 GHz Power Amplifier in a 130 nm SiGe BiCMOS Technology for Communication Applications
A broadband three-stage pseudo-differential SiGe-interconnection bipolar transistor (HBT) power amplifier (PA) for high-speed communication at around 300 GHz is presented. The amplifier is fabricated in an experimental 130-nm SiGe BiCMOS technology with an $f_{t}/f_{\max }$ of 470/650 GHz. The use of asymmetric coupled line transformers is proposed to facilitate broadband impedance transformation with device reactance compensation at all amplifier interfaces. The amplifier achieves a maximum small-signal power gain of 23.0 dB and a $P_{\mathrm{ sat}}/{\mathrm{ OP}}_{\mathrm{ 1\,dB}}$ up to 9.7/6.7 dBm, respectively. It shows a 3-dB bandwidth of 63 GHz (239–302 GHz) in small-signal operation and 94 GHz (223–317 GHz) when saturated. The amplifier consumes about 360 mW at a 3-V supply voltage yielding a peak power-added efficiency (PAE) of 1.95% at 260 GHz.
- 8 April 2022
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 57 (7) , 2024-2034
Open AccessA Broadband 300 GHz Power Amplifier in a 130 nm SiGe BiCMOS Technology for Communication Applications
A broadband three-stage pseudo-differential SiGe-interconnection bipolar transistor (HBT) power amplifier (PA) for high-speed communication at around 300 GHz is presented. The amplifier is fabricated in an experimental 130-nm SiGe BiCMOS technology with an $f_{t}/f_{\max }$ of 470/650 GHz. The use of asymmetric coupled line transformers is proposed to facilitate broadband impedance transformation with device reactance compensation at all amplifier interfaces. The amplifier achieves a maximum small-signal power gain of 23.0 dB and a $P_{\mathrm{ sat}}/{\mathrm{ OP}}_{\mathrm{ 1\,dB}}$ up to 9.7/6.7 dBm, respectively. It shows a 3-dB bandwidth of 63 GHz (239–302 GHz) in small-signal operation and 94 GHz (223–317 GHz) when saturated. The amplifier consumes about 360 mW at a 3-V supply voltage yielding a peak power-added efficiency (PAE) of 1.95% at 260 GHz.
- 9 April 2020
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Components Letters
- Vol. 30 (5) , 512-515
A 210–291-GHz (8×) Frequency Multiplier Chain With Low Power Consumption in 0.13-μm SiGe
This letter presents a 210-291-GHz 8x multiplier chain in the 0.13-μm SiGe Bipolar CMOS (BiCMOS) technology for the broadband generation of carrier signals, imaging, and spectroscopy. It consists of three cascaded Gilbert-cell doublers with compact input matching networks to generate quadrature collector currents in the switching quad for broadband flat conversion gain. The multiplier chain generates a saturated output power of -7.7 dBm at 244.5 GHz with a 3-dB bandwidth of 81 GHz. It consumes 0.24 W of dc power and occupies 0.86 mm² of chip area.
- 9 April 2020
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Components Letters
- Vol. 30 (5) , 512-515
A 210–291-GHz (8×) Frequency Multiplier Chain With Low Power Consumption in 0.13-μm SiGe
This letter presents a 210-291-GHz 8x multiplier chain in the 0.13-μm SiGe Bipolar CMOS (BiCMOS) technology for the broadband generation of carrier signals, imaging, and spectroscopy. It consists of three cascaded Gilbert-cell doublers with compact input matching networks to generate quadrature collector currents in the switching quad for broadband flat conversion gain. The multiplier chain generates a saturated output power of -7.7 dBm at 244.5 GHz with a 3-dB bandwidth of 81 GHz. It consumes 0.24 W of dc power and occupies 0.86 mm² of chip area.
- 1 January 2005
- Published by Springer Nature
- p. 149-161
Antifa-Szene