Penghao Zhang

The V_th stability and gate reliability of AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) with alternating O₂ plasma treatment were systematically investigated in this article. It was found that the conduction band offset at the Al₂O₃/AlGaN interface was elevated to 2.4 eV, which contributed to the suppressed gate leakage current. The time-dependent dielectric breakdown (TDDB) test results showed that the ALD-Al₂O₃ with the alternating O₂ plasma treatment had better quality and reliability. The AlGaN/GaN MIS-HEMT with the alternating O₂ plasma treatment demonstrated remarkable advantages in higher V_th stability under high-temperature and long-term gate bias stress.

Harmonic distortion is one of the dominant factors limiting the overall signal-to-noise and distortion ratio of seismic-grade sigma-delta MEMS accelerometers. This study investigates harmonic distortion based on the multiple degree-of-freedom model (MDM) established in our previous study. The main advantage of using an MDM is that the effect of finger flexibility on harmonic distortion is considered. Initially, the nonlinear relationship between the input acceleration and output signal is derived using the MDM. Then, harmonic distortion is simulated and described in terms of the nonlinear input–output relationship. It is found that finger flexibility and parasitic capacitance mismatch both decrease harmonic distortion. Finally, the experimental testing of harmonic distortion is implemented. By reducing the finger length to realize a higher stiffness and compensating for the parasitic capacitance mismatch, the total harmonic distortion decreases from −66.8 dB to −86.9 dB.

A novel atomic-level post-etch-surface-reinforcement (PESR) process is developed to recover the p-GaN etching induced damage region for high performance p-GaN gate HEMTs fabrication. This process is composed of a self-limited surface modification step with O₂ plasma, following by an oxide removal step with BCl₃ plasma. With PESR process, the AlGaN surface morphology after p-GaN etching was comparable to the as-epitaxial level by AFM characterization, and the AlGaN lattice crystallization was also recovered which was measured in a confocal Raman system. The electrical measurement further confirmed the significant improvement of AlGaN surface quality, with one-order of magnitude lower surface leakage in a metal-semiconductor (MS) Schottky-diode and 6 times lower interface density of states (D_it) in a MIS C-V characterization. The XPS analysis of Al₂O₃/AlGaN showed that the p-GaN etching induced F-byproduct and Ga-oxide was well removed and suppressed by PESR process. Finally, the developed PESR process was successfully integrated in p-GaN gate HEMTs fabrication, and the device performance was significantly enhanced with ~20% lower of on-resistance and ~25% less of current collapse at V_ds,Q bias of 40 V, showing great potential of leverage p-GaN gate HEMTs reliability.

A systematic study of epi-AlGaN/GaN on a SiC substrate was conducted through a comprehensive analysis of material properties and device performance. In this novel epitaxial design, an AlGaN/GaN channel layer was grown directly on the AlN nucleation layer, without the conventional doped thick buffer layer. Compared to the conventional epi-structures on the SiC and Si substrates, the non-buffer epi-AlGaN/GaN structure had a better crystalline quality and surface morphology, with reliable control of growth stress. Hall measurements showed that the novel structure exhibited comparable transport properties to the conventional epi-structure on the SiC substrate, regardless of the buffer layer. Furthermore, almost unchanged carrier distribution from room temperature to 150 °C indicated excellent two-dimensional electron gas (2DEG) confinement due to the pulling effect of the conduction band from the nucleation layer as a back-barrier. High-performance depletion-mode MIS-HEMTs were demonstrated with on-resistance of 5.84 Ω·mm and an output current of 1002 mA/mm. The dynamic characteristics showed a much smaller decrease in the saturation current (only ~7%), with a quiescent drain bias of 40 V, which was strong evidence of less electron trapping owing to the high-quality non-buffer AlGaN/GaN epitaxial growth.

The high-order mechanical resonances of the sensing element in a high-vacuum environment can significantly degrade the noise and distortion performance of seismic-grade sigma–delta MEMS capacitive accelerometers. However, the current modeling approach is unable to evaluate the effects of high-order mechanical resonances. This study proposes a novel multiple-degree-of-freedom (MDOF) model to evaluate the noise and distortion induced by high-order mechanical resonances. Firstly, the MDOF dynamic equations of the sensing element are derived using the principle of modal superposition and Lagrange’s equations. Secondly, a fifth-order electromechanical sigma–delta system of the MEMS accelerometer is established in Simulink based on the dynamic equations of the sensing element. Then, the mechanism through which the high-order mechanical resonances degrade the noise and distortion performances is discovered by analyzing the simulated result. Finally, a noise and distortion suppression method is proposed based on the appropriate improvement in high-order natural frequency. The results show that the low-frequency noise drastically decreases from about −120.5 dB to −175.3 dB after the high-order natural frequency increases from about 130 kHz to 455 kHz. The harmonic distortion also reduces significantly.

A novel monocrystalline AlN interfacial layer formation method is proposed to improve the device performance of the fully recessed-gate Al₂O₃/AlN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors (MIS-HEMTs), which is achieved by plasma-enhanced atomic layer deposition (PEALD) and in situ N₂ plasma annealing (NPA). Compared with the traditional RTA method, the NPA process not only avoids the device damage caused by high temperatures but also obtains a high-quality AlN monocrystalline film that avoids natural oxidation by in situ growth. As a contrast with the conventional PELAD amorphous AlN, C-V results indicated a significantly lower interface density of states (D_it) in a MIS C-V characterization, which could be attributed to the polarization effect induced by the AlN crystal from the X-ray Diffraction (XRD) and Transmission Electron Microscope (TEM) characterizations. The proposed method could reduce the subthreshold swing, and the Al₂O₃/AlN/GaN MIS-HEMTs were significantly enhanced with ~38% lower on-resistance at V_g = 10 V. What is more, in situ NPA provides a more stable threshold voltage (V_th) after a long gate stress time, and ΔV_th is inhibited by about 40 mV under V_g,stress = 10 V for 1000 s, showing great potential for improving Al₂O₃/AlN/GaN MIS-HEMT gate reliability.

A systematic study of the selective etching of p-GaN over AlGaN was carried out using a BCl₃/SF₆ inductively coupled plasma (ICP) process. Compared to similar chemistry, a record high etch selectivity of 41:1 with a p-GaN etch rate of 3.4 nm/min was realized by optimizing the SF₆ concentration, chamber pressure, ICP and bias power. The surface morphology after p-GaN etching was characterized by AFM for both selective and nonselective processes, showing the exposed AlGaN surface RMS values of 0.43 nm and 0.99 nm, respectively. MIS-capacitor devices fabricated on the AlGaN surface with ALD-Al₂O₃ as the gate dielectric after p-GaN etch showed the significant benefit of BCl₃/SF₆ selective etch process.