WQWei Qiao

Wei Qiao

*This is an algorithmically generated author record based on publicly available information.

Current Organizations / Institutes

The organizations/institutes from the scholar's latest article


Wei Qiao has a total of 13 co-authors. Here are the top co-authors by number of shared publications:

  • Binghui Niu

    Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China

    2 shared publications
  • Gang Wang

    Beijing Institute of Technology

    2 shared publications
  • Haiyang Liu

    Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China

    2 shared publications
  • Lei Xiong

    Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China

    2 shared publications
  • Tianhong Tang

    Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China

    2 shared publications
  • Xiaoyue Fan

    Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China

    2 shared publications

Latest Publications

  • Open Access

    Twist Angle-Dependent Interlayer Exciton in MoS2 Bilayers Revealed by Room-Temperature Reflectance

    by Lei Xiong, Tianhong Tang, Xiaoyue Fan, Haiyang Liu, Peng Zhu, Xiaolan Zhang, Wei Qiao, Qinsheng Wang, Zhiwei Wang, Binghui Niu, et al.

    In 2H stacking bilayer MoS2, the exciton with an interlayer nature has been evidenced due to the hybridization of hole states among both layers. The transition energy of this interlayer exciton is located between the A and B excitons. In this work, we investigate the evolution of optical properties in stacking MoS2 bilayers with the twisted angles ranging from 0° to 60°, especially focusing on the interlayer exciton. The clear modulations of the exciton responses are observed by the room-temperature reflectance. The interlayer exciton transition is observed in the artificial stacking bilayer MoS2 with the twisted angle around 60°. We found that the interlayer exciton is very sensitive to the twisted angle. Once the stacking angle deviates the 2H stacking by a few degrees, the interlayer transition is quenched. This is due to the bilayer symmetry and interlayer coupling of this unique system.


  • Open Access

    Interlayer Coupling and Pressure Engineering in Bilayer MoS2

    by Wei Qiao, Hao Sun, Xiaoyue Fan, Meiling Jin, Haiyang Liu, Tianhong Tang, Lei Xiong, Binghui Niu, Xiang Li, Gang Wang

    Controlling the interlayer coupling by tuning lattice parameters through pressure engineering is an important route for tailoring the optoelectronic properties of two-dimensional materials. In this work, we report a pressure-dependent study on the exciton transitions of bilayer MoS2 exfoliated on a diamond anvil surface. The applied hydrostatic pressure changes from ambient pressure up to 11.05 GPa using a diamond anvil cell device. Raman, photoluminescence, and reflectivity spectra at room temperature are analyzed to characterize the interlayer coupling of this bilayer system. With the increase of pressure, the indirect exciton emission disappears completely at about 5 GPa. Importantly, we clearly observed the interlayer exciton from the reflectivity spectra, which becomes invisible at a low pressure around 1.26 GPa. This indicates that the interlayer exciton is very sensitive to the hydrostatic pressure due to the oscillator strength transfer from the direct transition to the indirect one.